IRFB4321G - описание и поиск аналогов

 

IRFB4321G. Аналоги и основные параметры

Наименование производителя: IRFB4321G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 330 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 83 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 60 ns

Cossⓘ - Выходная емкость: 390 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm

Тип корпуса: TO220AB

Аналог (замена) для IRFB4321G

- подборⓘ MOSFET транзистора по параметрам

 

IRFB4321G даташит

 ..1. Size:283K  international rectifier
irfb4321gpbf.pdfpdf_icon

IRFB4321G

PD - 96215 IRFB4321GPbF Applications HEXFET Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m ID 83A Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D D Performance l Improved Diode Recovery

 6.1. Size:277K  international rectifier
irfb4321pbf.pdfpdf_icon

IRFB4321G

PD - 97103B IRFB4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m Benefits ID 85A l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance D D l Improved Diode Re

 6.2. Size:206K  inchange semiconductor
irfb4321pbf.pdfpdf_icon

IRFB4321G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4321PBF FEATURES With low gate drive requirements Improved diode recovery improves switching Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 6.3. Size:245K  inchange semiconductor
irfb4321.pdfpdf_icon

IRFB4321G

isc N-Channel MOSFET Transistor IRFB4321 IIRFB4321 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM

Другие MOSFET... IRFB4229 , IRFB4233 , IRFB42N20D , IRFB4310 , IRFB4310G , IRFB4310Z , IRFB4310ZG , IRFB4321 , AO3400 , IRFB4332 , IRFB4410 , IRFB4410Z , IRFB4410ZG , IRFB4610 , IRFB4615 , IRFB4620 , IRFB4710 .

History: IRFB4410ZG | AUIRFR4104 | IRLU3705Z | IRFB4332 | IRFB4321 | IRFB4610

 

 

 

 

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