All MOSFET. IRFB4321G Datasheet

 

IRFB4321G MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB4321G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 330 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 83 A

Total Gate Charge (Qg): 71 nC

Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm

Package: TO220AB

IRFB4321G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4321G Datasheet (PDF)

1.1. irfb4321gpbf.pdf Size:283K _upd-mosfet

IRFB4321G
IRFB4321G

PD - 96215 IRFB4321GPbF Applications HEXFET® Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m ID 83A Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D D Performance l Improved Diode Recovery

2.1. irfb4321pbf.pdf Size:277K _upd-mosfet

IRFB4321G
IRFB4321G

PD - 97103B IRFB4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12m : l Hard Switched and High Frequency Circuits max. 15m : Benefits ID 85A l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance D D l Improved Diode Re

 4.1. irfb4332pbf.pdf Size:306K _upd-mosfet

IRFB4321G
IRFB4321G

PD - 97099A IRFB4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m: RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 °C and Pass Switch Applications l Low QG fo

4.2. irfb4310pbf.pdf Size:376K _upd-mosfet

IRFB4321G
IRFB4321G

PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 4.3. irfb4310zgpbf.pdf Size:291K _upd-mosfet

IRFB4321G
IRFB4321G

PD - 96189 IRFB4310ZGPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedn

4.4. irfb4310zpbf.pdf Size:324K _upd-mosfet

IRFB4321G
IRFB4321G

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

 4.5. irfb4310gpbf.pdf Size:285K _upd-mosfet

IRFB4321G
IRFB4321G

PD - 96190 IRFB4310GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

Datasheet: IRFB4229 , IRFB4233 , IRFB42N20D , IRFB4310 , IRFB4310G , IRFB4310Z , IRFB4310ZG , IRFB4321 , IRFZ34N , IRFB4332 , IRFB4410 , IRFB4410Z , IRFB4410ZG , IRFB4610 , IRFB4615 , IRFB4620 , IRFB4710 .

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