IRFB4321G MOSFET Datasheet: N-Ch, 150V, 83A. Full specification with pinout and replacement list

IRFB4321G Specs and Replacement

Type Designator: IRFB4321G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 330 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 83 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 390 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO220AB

IRFB4321G substitution

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IRFB4321G datasheet

..1. Size:283K international rectifier
irfb4321gpbf.pdf pdf_icon

PD - 96215 IRFB4321GPbF Applications HEXFET Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m ID 83A Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D D Performance l Improved Diode Recovery... See More ⇒

6.1. Size:277K international rectifier
irfb4321pbf.pdf pdf_icon

PD - 97103B IRFB4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m Benefits ID 85A l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance D D l Improved Diode Re... See More ⇒

6.2. Size:206K inchange semiconductor
irfb4321pbf.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB4321PBF FEATURES With low gate drive requirements Improved diode recovery improves switching Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

6.3. Size:245K inchange semiconductor
irfb4321.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFB4321 IIRFB4321 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ABSOLUTE MAXIMUM ... See More ⇒

Detailed specifications: IRFB4229 , IRFB4233 , IRFB42N20D , IRFB4310 , IRFB4310G , IRFB4310Z , IRFB4310ZG , IRFB4321 , AO3400 , IRFB4332 , IRFB4410 , IRFB4410Z , IRFB4410ZG , IRFB4610 , IRFB4615 , IRFB4620 , IRFB4710 .