All MOSFET. IRFB4321G Datasheet

 

IRFB4321G Datasheet and Replacement


   Type Designator: IRFB4321G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 83 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 71 nC
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220AB
 

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IRFB4321G Datasheet (PDF)

 ..1. Size:283K  international rectifier
 irfb4321gpbf.pdf pdf_icon

IRFB4321G

PD - 96215IRFB4321GPbFApplicationsHEXFET Power MOSFETl Motion Control ApplicationsVDSS 150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.12ml Hard Switched and High Frequency Circuits max. 15mID 83ABenefitsl Low RDSON Reduces Lossesl Low Gate Charge Improves the Switching DD Performancel Improved Diode Recovery

 6.1. Size:277K  international rectifier
 irfb4321pbf.pdf pdf_icon

IRFB4321G

PD - 97103BIRFB4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power SupplyRDS(on) typ.12m:l Hard Switched and High Frequency Circuitsmax. 15m:BenefitsID 85Al Low RDSON Reduces Lossesl Low Gate Charge Improves the Switching PerformanceDDl Improved Diode Re

 6.2. Size:206K  inchange semiconductor
 irfb4321pbf.pdf pdf_icon

IRFB4321G

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4321PBFFEATURESWith low gate drive requirementsImproved diode recovery improves switchingEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 6.3. Size:245K  inchange semiconductor
 irfb4321.pdf pdf_icon

IRFB4321G

isc N-Channel MOSFET Transistor IRFB4321IIRFB4321FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

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Keywords - IRFB4321G MOSFET datasheet

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