Справочник MOSFET. IRFB4710

 

IRFB4710 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFB4710
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 200 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 5.5 V
   Максимально допустимый постоянный ток стока |Id|: 75 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 110 nC
   Время нарастания (tr): 130 ns
   Выходная емкость (Cd): 440 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.014 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRFB4710

 

 

IRFB4710 Datasheet (PDF)

 ..1. Size:245K  international rectifier
irfb4710.pdf

IRFB4710
IRFB4710

PD- 94080IRFB4710 IRFS4710 IRFSL4710HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters100V 0.014 75A Motor Control Uninterrutible Power SuppliesBenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-220ABD2Pak TO-262

 ..2. Size:662K  international rectifier
irfb4710pbf irfs4710pbf irfsl4710pbf.pdf

IRFB4710
IRFB4710

PD- 95146IRFB4710PbF IRFS4710PbF IRFSL4710PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters100V 0.014 75A Motor Control Uninterrutible Power Supplies Lead-FreeBenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-2

 ..3. Size:663K  infineon
irfb4710pbf irfs4710pbf irfsl4710pbf.pdf

IRFB4710
IRFB4710

PD- 95146IRFB4710PbF IRFS4710PbF IRFSL4710PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters100V 0.014 75A Motor Control Uninterrutible Power Supplies Lead-FreeBenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-2

 ..4. Size:245K  inchange semiconductor
irfb4710.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4710IIRFB4710FEATURESStatic drain-source on-resistance:RDS(on) 0.014Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.1. Size:231K  international rectifier
irfb4215pbf.pdf

IRFB4710
IRFB4710

PD - 95757AIRFB4215PbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 60Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 9.0mGl Fast Switchingl Fully Avalanche RatedID = 115Al Optimized for SMPS Applications Sl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced

 9.2. Size:285K  international rectifier
irfb4310gpbf.pdf

IRFB4710
IRFB4710

PD - 96190IRFB4310GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 9.3. Size:324K  international rectifier
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

IRFB4710
IRFB4710

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

 9.4. Size:283K  international rectifier
irfb4321gpbf.pdf

IRFB4710
IRFB4710

PD - 96215IRFB4321GPbFApplicationsHEXFET Power MOSFETl Motion Control ApplicationsVDSS 150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.12ml Hard Switched and High Frequency Circuits max. 15mID 83ABenefitsl Low RDSON Reduces Lossesl Low Gate Charge Improves the Switching DD Performancel Improved Diode Recovery

 9.5. Size:376K  international rectifier
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf

IRFB4710
IRFB4710

PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 9.6. Size:215K  international rectifier
irfb42n20d.pdf

IRFB4710
IRFB4710

PD- 94208SMPS MOSFETIRFB42N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.055 44A Motor Control Uninterrutible Power SuppliesBenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Vo

 9.7. Size:214K  international rectifier
irfb4510pbf.pdf

IRFB4710
IRFB4710

PD - 97772IRFB4510PbFHEXFET Power MOSFETDApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.10.7ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 13.5ml Hard Switched and High Frequency CircuitsID (Silicon Limited)62ASBenefitsDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characte

 9.8. Size:281K  international rectifier
irfb4019pbf.pdf

IRFB4710
IRFB4710

PD - 97075DIGITAL AUDIO MOSFETIRFB4019PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS 150 V Amplifier Applicationsm:RDS(ON) typ. @ 10V 80 Low RDSON for Improved EfficiencyQg typ. 13 nC Low QG and QSW for Better THD and ImprovedQsw typ. 5.1 nC EfficiencyRG(int) typ. 2.4 Low QRR for Better THD and Lower EMITJ max 175 C

 9.9. Size:389K  international rectifier
irfb4137pbf.pdf

IRFB4710
IRFB4710

IRFB4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69mmax SID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 9.10. Size:291K  international rectifier
irfb4310zgpbf.pdf

IRFB4710
IRFB4710

PD - 96189IRFB4310ZGPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8ml Uninterruptible Power Supplyl High Speed Power Switching max. 6.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 127A ID (Package Limited) 120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggedn

 9.11. Size:312K  international rectifier
irfb4115gpbf.pdf

IRFB4710
IRFB4710

PD - 96216IRFB4115GPbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness Dl Fully Characterize

 9.12. Size:330K  international rectifier
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

IRFB4710
IRFB4710

IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl

 9.13. Size:231K  international rectifier
irfb4115pbf.pdf

IRFB4710
IRFB4710

PD - 97354BIRFB4115PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Ca

 9.14. Size:337K  international rectifier
irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf.pdf

IRFB4710
IRFB4710

PD - 94927AIRFB41N15DPbFIRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max IDBenefits150V 0.045 41Al Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avala

 9.15. Size:284K  international rectifier
irfb4227pbf.pdf

IRFB4710
IRFB4710

PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 17

 9.16. Size:292K  international rectifier
irfb4229pbf.pdf

IRFB4710
IRFB4710

PD - 97078AIRFB4229PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for PDP Sustain,VDS min250 V Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C and Pass Switch Applications 91 Al Low QG f

 9.17. Size:291K  international rectifier
irfb4127pbf.pdf

IRFB4710
IRFB4710

PD -97136AIRFB4127PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 17m:l High Speed Power SwitchingGmax. 20m:l Hard Switched and High Frequency CircuitsID 76ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avala

 9.18. Size:169K  international rectifier
irfb42n20dpbf.pdf

IRFB4710
IRFB4710

PD- 95470SMPS MOSFETIRFB42N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.055 44Al Motor Controll Uninterrutible Power Suppliesl Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Char

 9.19. Size:277K  international rectifier
irfb4321pbf.pdf

IRFB4710
IRFB4710

PD - 97103BIRFB4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power SupplyRDS(on) typ.12m:l Hard Switched and High Frequency Circuitsmax. 15m:BenefitsID 85Al Low RDSON Reduces Lossesl Low Gate Charge Improves the Switching PerformanceDDl Improved Diode Re

 9.20. Size:293K  international rectifier
irfb4212pbf.pdf

IRFB4710
IRFB4710

PD - 96918ADIGITAL AUDIO MOSFETIRFB4212PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS 100 V amplifier applicationsm:RDS(ON) typ. @ 10V 72.5 Low RDSON for improved efficiencyQg typ. 15 nC Low QG and QSW for better THD and improvedQsw typ. 8.3 nC efficiencyRG(int) typ. 2.2 Low QRR for better THD and lower EMITJ max 175 C

 9.21. Size:802K  international rectifier
irfb4410.pdf

IRFB4710
IRFB4710

PD - 96902CIRFB4410IRFS4410IRFSL4410ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS100Vl High Speed Power SwitchingRDS(on) typ.8.0ml Hard Switched and High Frequency CircuitsG max. 10mBenefitsID96Al Improved Gate, Avalanche and Dynamic dV/dtSRuggednessl Fully Characterized Capacita

 9.22. Size:283K  international rectifier
irfb4233pbf.pdf

IRFB4710
IRFB4710

PD - 97004AIRFB4233PbFPDP SWITCHFeaturesKey Parametersl Advanced process technologyVDS min 230 Vl Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 276 Vl Low EPULSE rating to reduce power dissipationmRDS(ON) typ. @ 10V 31 in PDP Sustain, Energy Recovery and PassIRP max @ TC= 100C 114 A Switch Applications

 9.23. Size:641K  international rectifier
irfb4020pbf.pdf

IRFB4710
IRFB4710

PD - 97195DIGITAL AUDIO MOSFETIRFB4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsRDS(ON) typ. @ 10V m80 Low RDSON for improved efficiency Qg typ.18 nCQsw typ.6.7 nC Low QG and QSW for better THD and improvedRG(int) typ. 3.2 efficiencyTJ max175 C Low QRR for better THD and lower EM

 9.24. Size:294K  international rectifier
irfb4615pbf.pdf

IRFB4710
IRFB4710

PD -96171IRFB4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 32ml High Speed Power SwitchingG max. 39ml Hard Switched and High Frequency CircuitsID 35ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 9.25. Size:306K  international rectifier
irfb4332pbf.pdf

IRFB4710
IRFB4710

PD - 97099AIRFB4332PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min 250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 Vl Low EPULSE Rating to Reduce Powerm:RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy RecoveryTJ max 175 C and Pass Switch Applicationsl Low QG fo

 9.26. Size:201K  international rectifier
irfb4215.pdf

IRFB4710
IRFB4710

PD - 95884IRFB4215HEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 60Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 9.0mGl Fast Switchingl Fully Avalanche RatedID = 115Al Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techn

 9.27. Size:288K  international rectifier
irfb4620pbf.pdf

IRFB4710
IRFB4710

PD -96172IRFB4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.60ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 72.5ml Hard Switched and High Frequency CircuitsID 25ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 9.28. Size:399K  international rectifier
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFB4710
IRFB4710

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 9.29. Size:303K  international rectifier
irfb4110gpbf.pdf

IRFB4710
IRFB4710

PD - 96214IRFB4110GPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessD Dl

 9.30. Size:237K  international rectifier
irfb4110pbf.pdf

IRFB4710
IRFB4710

PD - 97061DIRFB4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuits max. 4.5mID (Silicon Limited)180A ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDDl

 9.31. Size:294K  international rectifier
irfb4410zgpbf.pdf

IRFB4710
IRFB4710

PD - 96213IRFB4410ZGPbFHEXFET Power MOSFETDApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized C

 9.32. Size:292K  international rectifier
irfb4228pbf.pdf

IRFB4710
IRFB4710

PD - 97227AIRFB4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch ApplicationsRDS(ON) typ. @ 10V ml Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C170 A and Pass Switch Application

 9.33. Size:306K  international rectifier
irfb4110qpbf.pdf

IRFB4710
IRFB4710

PD - 96138IRFB4110QPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyVDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7ml Hard Switched and High Frequency Circuitsl Lead-Free max4.5mID180ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggednessDl Fully Characterized Capacitance an

 9.34. Size:708K  infineon
irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf

IRFB4710
IRFB4710

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri

 9.35. Size:799K  infineon
irfb4410pbf irfs4410pbf irfsl4410pbf.pdf

IRFB4710
IRFB4710

PD - 95707EIRFB4410PbFIRFS4410PbFIRFSL4410PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power SwitchingRDS(on) typ. 8.0ml Hard Switched and High Frequency CircuitsG max. 10mIDS 88ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 9.36. Size:324K  infineon
irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

IRFB4710
IRFB4710

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

 9.37. Size:278K  infineon
auirfb4410.pdf

IRFB4710
IRFB4710

PD - 97598AUTOMOTIVE GRADEAUIRFB4410HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS100V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.8.0m 175C Operating Temperature max. 10m Fast SwitchingG Repetitive Avalanche Allowed up toID (Silicon Limited)88ATjmax Lead-Free, RoHS CompliantID (Package Limited)

 9.38. Size:376K  infineon
irfb4310pbf irfs4310pbf irfsl4310pbf.pdf

IRFB4710
IRFB4710

PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 9.39. Size:218K  infineon
irfb4510pbf.pdf

IRFB4710
IRFB4710

PD - 97772IRFB4510PbFHEXFET Power MOSFETDApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.10.7ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 13.5ml Hard Switched and High Frequency CircuitsID (Silicon Limited)62ASBenefitsDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characte

 9.40. Size:281K  infineon
irfb4019pbf.pdf

IRFB4710
IRFB4710

PD - 97075DIGITAL AUDIO MOSFETIRFB4019PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS 150 V Amplifier Applicationsm:RDS(ON) typ. @ 10V 80 Low RDSON for Improved EfficiencyQg typ. 13 nC Low QG and QSW for Better THD and ImprovedQsw typ. 5.1 nC EfficiencyRG(int) typ. 2.4 Low QRR for Better THD and Lower EMITJ max 175 C

 9.41. Size:392K  infineon
irfb4137pbf.pdf

IRFB4710
IRFB4710

IRFB4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69mmax SID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

 9.42. Size:291K  infineon
irfb4310zgpbf.pdf

IRFB4710
IRFB4710

PD - 96189IRFB4310ZGPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8ml Uninterruptible Power Supplyl High Speed Power Switching max. 6.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 127A ID (Package Limited) 120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggedn

 9.43. Size:330K  infineon
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

IRFB4710
IRFB4710

IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl

 9.44. Size:336K  infineon
irfb4115pbf.pdf

IRFB4710
IRFB4710

IRFB4115PbFHEXFET Power MOSFETApplicationsDVDSS150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11ml Hard Switched and High Frequency CircuitsID (Silicon Limited)104ASBenefitsDl Improved Gate, Avalanche and Dynamic dv/dtRuggednessl Fully Characterized Capacita

 9.45. Size:284K  infineon
irfb4227pbf.pdf

IRFB4710
IRFB4710

PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 17

 9.46. Size:292K  infineon
irfb4229pbf.pdf

IRFB4710
IRFB4710

PD - 97078AIRFB4229PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for PDP Sustain,VDS min250 V Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C and Pass Switch Applications 91 Al Low QG f

 9.47. Size:291K  infineon
irfb4127pbf.pdf

IRFB4710
IRFB4710

PD -97136AIRFB4127PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 17m:l High Speed Power SwitchingGmax. 20m:l Hard Switched and High Frequency CircuitsID 76ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avala

 9.48. Size:277K  infineon
irfb4321pbf.pdf

IRFB4710
IRFB4710

PD - 97103BIRFB4321PbFHEXFET Power MOSFETApplicationsl Motion Control Applicationsl High Efficiency Synchronous Rectification in SMPSVDSS 150Vl Uninterruptible Power SupplyRDS(on) typ.12m:l Hard Switched and High Frequency Circuitsmax. 15m:BenefitsID 85Al Low RDSON Reduces Lossesl Low Gate Charge Improves the Switching PerformanceDDl Improved Diode Re

 9.49. Size:641K  infineon
irfb4020pbf.pdf

IRFB4710
IRFB4710

PD - 97195DIGITAL AUDIO MOSFETIRFB4020PbFFeaturesKey Parameters Key parameters optimized for Class-D audioVDS200 V amplifier applicationsRDS(ON) typ. @ 10V m80 Low RDSON for improved efficiency Qg typ.18 nCQsw typ.6.7 nC Low QG and QSW for better THD and improvedRG(int) typ. 3.2 efficiencyTJ max175 C Low QRR for better THD and lower EM

 9.50. Size:717K  infineon
auirfb4610 auirfs4610.pdf

IRFB4710
IRFB4710

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 9.51. Size:294K  infineon
irfb4615pbf.pdf

IRFB4710
IRFB4710

PD -96171IRFB4615PbFHEXFET Power MOSFETApplications DVDSS150Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 32ml High Speed Power SwitchingG max. 39ml Hard Switched and High Frequency CircuitsID 35ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 9.52. Size:310K  infineon
irfb4332pbf.pdf

IRFB4710
IRFB4710

PD - 97099IRFB4332PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min 250 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 Vl Low EPULSE Rating to Reduce Powerm:RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 120 A and Pass Switch Applications

 9.53. Size:288K  infineon
irfb4620pbf.pdf

IRFB4710
IRFB4710

PD -96172IRFB4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.60ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 72.5ml Hard Switched and High Frequency CircuitsID 25ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 9.54. Size:399K  infineon
irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

IRFB4710
IRFB4710

PD - 95936CIRFB4610PbFIRFS4610PbFIRFSL4610PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11mRDS(on) typ.l Hard Switched and High Frequency CircuitsG max. 14mID 73ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 9.55. Size:341K  infineon
irfb4110pbf.pdf

IRFB4710
IRFB4710

IRFB4110PbFHEXFET Power MOSFETApplicationsDVDSS 100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply3.7ml High Speed Power Switching max.4.5ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 180A S ID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtDRuggedness

 9.56. Size:381K  infineon
irfb4610 irfs4610 irfsl4610.pdf

IRFB4710
IRFB4710

PD - 96906BIRFB4610IRFS4610IRFSL4610ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switching11m:RDS(on) typ.l Hard Switched and High Frequency CircuitsGmax. 14m:Benefitsl Improved Gate, Avalanche and Dynamic dV/dtID 73ASRuggednessl Fully Characterized Capacita

 9.57. Size:292K  infineon
irfb4228pbf.pdf

IRFB4710
IRFB4710

PD - 97227AIRFB4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch ApplicationsRDS(ON) typ. @ 10V ml Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C170 A and Pass Switch Application

 9.58. Size:802K  infineon
irfb4410 irfs4410 irfsl4410.pdf

IRFB4710
IRFB4710

PD - 96902CIRFB4410IRFS4410IRFSL4410ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS100Vl High Speed Power SwitchingRDS(on) typ.8.0ml Hard Switched and High Frequency CircuitsG max. 10mBenefitsID96Al Improved Gate, Avalanche and Dynamic dV/dtSRuggednessl Fully Characterized Capacita

 9.59. Size:245K  inchange semiconductor
irfb4115g.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4115GIIRFB4115GFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMU

 9.60. Size:245K  inchange semiconductor
irfb4410zg.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4410ZGIIRFB4410ZGFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.61. Size:246K  inchange semiconductor
irfb4610.pdf

IRFB4710
IRFB4710

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4610IIRFB4610FEATURESStatic drain-source on-resistance:RDS(on) 14mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

 9.62. Size:245K  inchange semiconductor
irfb4110.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4110IIRFB4110FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 9.63. Size:244K  inchange semiconductor
irfb4510.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4510IIRFB4510FEATURESStatic drain-source on-resistance:RDS(on) 13.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.64. Size:245K  inchange semiconductor
irfb42n20d.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB42N20DIIRFB42N20DFEATURESStatic drain-source on-resistance:RDS(on) 55mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersUninterruptible Power SuppliesABSOLUTE MAXIMUM RATINGS(T =2

 9.65. Size:245K  inchange semiconductor
irfb4019.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4019IIRFB4019FEATURESStatic drain-source on-resistance:RDS(on) 95mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATINGS

 9.66. Size:245K  inchange semiconductor
irfb4228.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4228IIRFB4228FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

 9.67. Size:244K  inchange semiconductor
irfb41n15d.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB41N15DIIRFB41N15DFEATURESStatic drain-source on-resistance:RDS(on) 45mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 9.68. Size:245K  inchange semiconductor
irfb4615.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4615IIRFB4615FEATURESStatic drain-source on-resistance:RDS(on) 39mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

 9.69. Size:245K  inchange semiconductor
irfb4310.pdf

IRFB4710
IRFB4710

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310 IIRFB4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

 9.70. Size:246K  inchange semiconductor
irfb4137.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4137IIRFB4137FEATURESStatic drain-source on-resistance:RDS(on) 69mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

 9.71. Size:245K  inchange semiconductor
irfb4127.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4127IIRFB4127FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

 9.72. Size:245K  inchange semiconductor
irfb4620.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4620IIRFB4620FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMU

 9.73. Size:245K  inchange semiconductor
irfb4332.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4332IIRFB4332FEATURESStatic drain-source on-resistance:RDS(on) 33mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

 9.74. Size:251K  inchange semiconductor
irfb4310z.pdf

IRFB4710
IRFB4710

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310Z IIRFB4310ZFEATURESStatic drain-source on-resistance:RDS(on) 6.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

 9.75. Size:206K  inchange semiconductor
irfb4321pbf.pdf

IRFB4710
IRFB4710

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4321PBFFEATURESWith low gate drive requirementsImproved diode recovery improves switchingEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 9.76. Size:244K  inchange semiconductor
irfb4227.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4227IIRFB4227FEATURESStatic drain-source on-resistance:RDS(on) 24mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

 9.77. Size:246K  inchange semiconductor
irfb4410.pdf

IRFB4710
IRFB4710

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4410IIRFB4410FEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

 9.78. Size:245K  inchange semiconductor
irfb4321.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4321IIRFB4321FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

 9.79. Size:251K  inchange semiconductor
irfb4410z.pdf

IRFB4710
IRFB4710

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4410ZIIRFB4410ZFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

 9.80. Size:245K  inchange semiconductor
irfb4229.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4229IIRFB4229FEATURESStatic drain-source on-resistance:RDS(on) 46mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

 9.81. Size:244K  inchange semiconductor
irfb4212.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4212IIRFB4212FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.82. Size:245K  inchange semiconductor
irfb4110g.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4110G IIRFB4110GFEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 9.83. Size:206K  inchange semiconductor
irfb4310zpbf.pdf

IRFB4710
IRFB4710

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4310ZPBFFEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 9.84. Size:245K  inchange semiconductor
irfb4115.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4115IIRFB4115FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyABSOLUTE MAXIMUM

 9.85. Size:245K  inchange semiconductor
irfb4020.pdf

IRFB4710
IRFB4710

isc N-Channel MOSFET Transistor IRFB4020IIRFB4020FEATURESStatic drain-source on-resistance:RDS(on) 100mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATING

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFZ48N , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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