All MOSFET. IRFB4710 Datasheet

 

IRFB4710 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFB4710

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 75 A

Total Gate Charge (Qg): 110 nC

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO220AB

IRFB4710 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFB4710 Datasheet (PDF)

1.1. irfb4710pbf.pdf Size:662K _upd-mosfet

IRFB4710
IRFB4710

PD- 95146 IRFB4710PbF IRFS4710PbF IRFSL4710PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014Ω 75A Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-2

1.2. irfb4710.pdf Size:245K _international_rectifier

IRFB4710
IRFB4710

PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014? 75A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully

 5.1. irfb4137pbf.pdf Size:389K _upd-mosfet

IRFB4710
IRFB4710

IRFB4137PbF HEXFET® Power MOSFET Application  High Efficiency Synchronous Rectification in SMPS D VDSS 300V  Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m  Hard Switched and High Frequency Circuits G 69m max S ID 38A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Chara

5.2. irfb4115gpbf.pdf Size:312K _upd-mosfet

IRFB4710
IRFB4710

PD - 96216 IRFB4115GPbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3mΩ l High Speed Power Switching G max. 11mΩ l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterize

 5.3. irfb4229pbf.pdf Size:292K _upd-mosfet

IRFB4710
IRFB4710

PD - 97078A IRFB4229PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP Sustain, VDS min 250 V Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C and Pass Switch Applications 91 A l Low QG f

5.4. irfb4110pbf.pdf Size:237K _upd-mosfet

IRFB4710
IRFB4710

PD - 97061D IRFB4110PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

 5.5. irfb4215.pdf Size:201K _upd-mosfet

IRFB4710
IRFB4710

PD - 95884 IRFB4215 HEXFET® Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 9.0mΩ G l Fast Switching l Fully Avalanche Rated ID = 115Aˆ l Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techn

5.6. irfb41n15dpbf.pdf Size:337K _upd-mosfet

IRFB4710
IRFB4710

PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications HEXFET® Power MOSFET l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID Benefits 150V 0.045 41A l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avala

5.7. irfb4321gpbf.pdf Size:283K _upd-mosfet

IRFB4710
IRFB4710

PD - 96215 IRFB4321GPbF Applications HEXFET® Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m ID 83A Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D D Performance l Improved Diode Recovery

5.8. irfb4332pbf.pdf Size:306K _upd-mosfet

IRFB4710
IRFB4710

PD - 97099A IRFB4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m: RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 °C and Pass Switch Applications l Low QG fo

5.9. irfb4110gpbf.pdf Size:303K _upd-mosfet

IRFB4710
IRFB4710

PD - 96214 IRFB4110GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l

5.10. irfb4615pbf.pdf Size:294K _upd-mosfet

IRFB4710
IRFB4710

PD -96171 IRFB4615PbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 32m l High Speed Power Switching G max. 39m l Hard Switched and High Frequency Circuits ID 35A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

5.11. irfb4115pbf.pdf Size:231K _upd-mosfet

IRFB4710
IRFB4710

PD - 97354B IRFB4115PbF HEXFET® Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 9.3mΩ l High Speed Power Switching G max. 11mΩ l Hard Switched and High Frequency Circuits ID (Silicon Limited) 104A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Ca

5.12. irfb4215pbf.pdf Size:231K _upd-mosfet

IRFB4710
IRFB4710

PD - 95757A IRFB4215PbF HEXFET® Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 9.0mΩ G l Fast Switching l Fully Avalanche Rated ID = 115Aˆ l Optimized for SMPS Applications S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced

5.13. irfb4510pbf.pdf Size:214K _upd-mosfet

IRFB4710
IRFB4710

PD - 97772 IRFB4510PbF HEXFET® Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 10.7m Ω l Uninterruptible Power Supply l High Speed Power Switching G max. 13.5m Ω l Hard Switched and High Frequency Circuits ID (Silicon Limited) 62A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characte

5.14. irfb4212pbf.pdf Size:293K _upd-mosfet

IRFB4710
IRFB4710

PD - 96918A DIGITAL AUDIO MOSFET IRFB4212PbF Features Key Parameters • Key parameters optimized for Class-D audio VDS 100 V amplifier applications m: RDS(ON) typ. @ 10V 72.5 • Low RDSON for improved efficiency Qg typ. 15 nC • Low QG and QSW for better THD and improved Qsw typ. 8.3 nC efficiency RG(int) typ. 2.2 Ω • Low QRR for better THD and lower EMI TJ max 175 °C

5.15. irfb4310pbf.pdf Size:376K _upd-mosfet

IRFB4710
IRFB4710

PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

5.16. irfb4019pbf.pdf Size:281K _upd-mosfet

IRFB4710
IRFB4710

PD - 97075 DIGITAL AUDIO MOSFET IRFB4019PbF Features Key Parameters • Key Parameters Optimized for Class-D Audio VDS 150 V Amplifier Applications m: RDS(ON) typ. @ 10V 80 • Low RDSON for Improved Efficiency Qg typ. 13 nC • Low QG and QSW for Better THD and Improved Qsw typ. 5.1 nC Efficiency RG(int) typ. 2.4 Ω • Low QRR for Better THD and Lower EMI TJ max 175 °C

5.17. irfb4310zgpbf.pdf Size:291K _upd-mosfet

IRFB4710
IRFB4710

PD - 96189 IRFB4310ZGPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedn

5.18. irfb4227pbf.pdf Size:284K _upd-mosfet

IRFB4710
IRFB4710

PD - 97035D IRFB4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 130 A and Pass Switch Applications TJ max 17

5.19. irfb4410zpbf.pdf Size:330K _upd-mosfet

IRFB4710
IRFB4710

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET® Power MOSFET Applications D VDSS l High Efficiency Synchronous Rectification in SMPS 100V l Uninterruptible Power Supply RDS(on) typ. 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D l

5.20. irfb4620pbf.pdf Size:288K _upd-mosfet

IRFB4710
IRFB4710

PD -96172 IRFB4620PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 60m l Uninterruptible Power Supply l High Speed Power Switching G max. 72.5m l Hard Switched and High Frequency Circuits ID 25A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

5.21. irfb4310zpbf.pdf Size:324K _upd-mosfet

IRFB4710
IRFB4710

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

5.22. irfb4410.pdf Size:802K _upd-mosfet

IRFB4710
IRFB4710

PD - 96902C IRFB4410 IRFS4410 IRFSL4410 Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m Benefits ID 96A l Improved Gate, Avalanche and Dynamic dV/dt S Ruggedness l Fully Characterized Capacita

5.23. irfb4127pbf.pdf Size:291K _upd-mosfet

IRFB4710
IRFB4710

PD -97136A IRFB4127PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 17m : l High Speed Power Switching G max. 20m : l Hard Switched and High Frequency Circuits ID 76A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avala

5.24. irfb42n20dpbf.pdf Size:169K _upd-mosfet

IRFB4710
IRFB4710

PD- 95470 SMPS MOSFET IRFB42N20DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.055Ω 44A l Motor Control l Uninterrutible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Char

5.25. irfb4020pbf.pdf Size:641K _upd-mosfet

IRFB4710
IRFB4710

PD - 97195 DIGITAL AUDIO MOSFET IRFB4020PbF Features Key Parameters • Key parameters optimized for Class-D audio VDS 200 V amplifier applications RDS(ON) typ. @ 10V m 80 • Low RDSON for improved efficiency Qg typ. 18 nC Qsw typ. 6.7 nC • Low QG and QSW for better THD and improved RG(int) typ. 3.2 Ω efficiency TJ max 175 °C • Low QRR for better THD and lower EM

5.26. irfb4228pbf.pdf Size:292K _upd-mosfet

IRFB4710
IRFB4710

PD - 97227A IRFB4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications RDS(ON) typ. @ 10V m l Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 170 A and Pass Switch Application

5.27. irfb4321pbf.pdf Size:277K _upd-mosfet

IRFB4710
IRFB4710

PD - 97103B IRFB4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12m : l Hard Switched and High Frequency Circuits max. 15m : Benefits ID 85A l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance D D l Improved Diode Re

5.28. irfb4610pbf.pdf Size:399K _upd-mosfet

IRFB4710
IRFB4710

PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m ID 73A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

5.29. irfb4310gpbf.pdf Size:285K _upd-mosfet

IRFB4710
IRFB4710

PD - 96190 IRFB4310GPbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

5.30. irfb4233pbf.pdf Size:283K _upd-mosfet

IRFB4710
IRFB4710

PD - 97004A IRFB4233PbF PDP SWITCH Features Key Parameters l Advanced process technology VDS min 230 V l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 276 V l Low EPULSE rating to reduce power dissipation m RDS(ON) typ. @ 10V 31 in PDP Sustain, Energy Recovery and Pass IRP max @ TC= 100°C 114 A Switch Applications

5.31. irfb4410zgpbf.pdf Size:294K _upd-mosfet

IRFB4710
IRFB4710

PD - 96213 IRFB4410ZGPbF HEXFET® Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized C

5.32. irfb42n20d.pdf Size:215K _international_rectifier

IRFB4710
IRFB4710

PD- 94208 SMPS MOSFET IRFB42N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.055? 44A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage

Datasheet: IRFB4321G , IRFB4332 , IRFB4410 , IRFB4410Z , IRFB4410ZG , IRFB4610 , IRFB4615 , IRFB4620 , IRF830 , IRFB52N15D , IRFB5615 , IRFB5620 , IRFB59N10D , IRFB61N15D , IRFB812 , IRFBA1404P , IRFBA1405P .

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