Справочник MOSFET. IRFL014N

 

IRFL014N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFL014N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7.1 ns
   Cossⓘ - Выходная емкость: 72 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для IRFL014N

 

 

IRFL014N Datasheet (PDF)

 ..1. Size:158K  international rectifier
 irfl014npbf.pdf

IRFL014N IRFL014N

PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on

 ..2. Size:144K  international rectifier
 irfl014n.pdf

IRFL014N IRFL014N

PD- 92003AIRFL014NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.16 Fast SwitchingG Fully Avalanche RatedID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silic

 ..3. Size:158K  infineon
 irfl014npbf.pdf

IRFL014N IRFL014N

PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on

 0.1. Size:215K  international rectifier
 auirfl014n.pdf

IRFL014N IRFL014N

AUTOMOTIVE GRADEAUIRFL014NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Dynamic dV/dT Rating 150C Operating TemperatureRDS(on) max.0.16G Fast Switching Fully Avalanche RatedS Repetitive Avalanche Allowed up to Tjmax ID 1.9A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed f

 7.1. Size:176K  international rectifier
 irfl014.pdf

IRFL014N IRFL014N

 7.2. Size:811K  international rectifier
 irfl014pbf.pdf

IRFL014N IRFL014N

PD- 95227IRFL014PbF_ Lead-Free04/28/04Document Number: 91191 www.vishay.com1IRFL014PbFDocument Number: 91191 www.vishay.com2IRFL014PbFDocument Number: 91191 www.vishay.com3IRFL014PbFDocument Number: 91191 www.vishay.com4IRFL014PbFDocument Number: 91191 www.vishay.com5IRFL014PbFDocument Number: 91191 www.vishay.com6IRFL014PbFDocument Number: 9119

 7.3. Size:998K  vishay
 irfl014 sihfl014.pdf

IRFL014N IRFL014N

IRFL014, SiHFL014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) ()VGS = 10 V 0.20 Surface Mount Available in Tape and ReelQg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 3.1 Fast SwitchingQgd (nC) 5.8 Ease of ParallelingConfiguration Single Simple Drive Requirements

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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