Справочник MOSFET. IRLML0100

 

IRLML0100 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRLML0100
   Маркировка: K*
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 2.5 nC
   trⓘ - Время нарастания: 2.1 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.22 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для IRLML0100

 

 

IRLML0100 Datasheet (PDF)

 ..1. Size:178K  international rectifier
 irlml0100pbf.pdf

IRLML0100 IRLML0100

PD - 97157IRLML0100TRPbFHEXFET Power MOSFETVDS100 VG 1VGS Max 16 VRDS(on) max 3 D220 m(@VGS = 10V)S 2RDS(on) max Micro3TM (SOT-23)235 mIRLML0100TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in

 ..2. Size:1950K  kexin
 irlml0100.pdf

IRLML0100 IRLML0100

SMD Type MOSFETN-Channel MOSFETIRLML0100 (KRLML0100)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 100V ID = 1.6A (VGS = 10V)1 2+0.02+0.1 RDS(ON) 220m (VGS = 10V) 0.15 -0.020.95 -0.1+0.11.9 -0.2G 1 RDS(ON) 235m (VGS = 4.5V)3 D1. Gate2. SourceS 23. Drain Absolute Maximum Ratings Ta = 25Param

 0.1. Size:204K  international rectifier
 irlml0100trpbf-1.pdf

IRLML0100 IRLML0100

IRLML0100PbF-1HEXFET Power MOSFETVDS 100 VRDS(on) max G 1220 m(@V = 10V)GSQg (typical) 2.5 nC3 DID 1.6 A(@T = 25C)AS 2Micro3TM (SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL

 0.2. Size:175K  international rectifier
 irlml0100trpbf.pdf

IRLML0100 IRLML0100

PD - 97157IRLML0100TRPbFHEXFET Power MOSFETVDS100 VG 1VGS Max 16 VRDS(on) max 3 D220 m(@VGS = 10V)S 2RDS(on) max Micro3TM (SOT-23)235 mIRLML0100TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in

 0.3. Size:178K  infineon
 irlml0100trpbf.pdf

IRLML0100 IRLML0100

PD - 97157IRLML0100TRPbFHEXFET Power MOSFETVDS100 VG 1VGS Max 16 VRDS(on) max 3 D220 m(@VGS = 10V)S 2RDS(on) max Micro3TM (SOT-23)235 mIRLML0100TRPbF(@VGS = 4.5V)Application(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in

 0.4. Size:1939K  kexin
 irlml0100-23.pdf

IRLML0100 IRLML0100

SMD Type MOSFETN-Channel MOSFETIRLML0100 (KRLML0100)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 1.6A (VGS = 10V)1 2+0.1+0.05 RDS(ON) 220m (VGS = 10V) 0.95-0.1 0.1-0.01+0.11.9-0.1G 1 RDS(ON) 235m (VGS = 4.5V)3 D1. Gate2. Source3. DrainS 2 Absolute Maximum Ratings Ta = 25Parameter S

 0.5. Size:1743K  cn vbsemi
 irlml0100trpbf.pdf

IRLML0100 IRLML0100

IRLML0100TRPBFwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backl

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