Справочник MOSFET. AUIRFB3207

 

AUIRFB3207 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AUIRFB3207
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 170 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 120 ns
   Cossⓘ - Выходная емкость: 710 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO220AB
 

 Аналог (замена) для AUIRFB3207

   - подбор ⓘ MOSFET транзистора по параметрам

 

AUIRFB3207 Datasheet (PDF)

 ..1. Size:282K  international rectifier
auirfb3207.pdfpdf_icon

AUIRFB3207

PD - 96322AUTOMOTIVE GRADEAUIRFB3207HEXFET Power MOSFETFeaturesD V(BR)DSS75Vl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) typ.3.6ml 175C Operating Temperaturemax. 4.5mGl Fast SwitchingID (Silicon Limited)170A l Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS CompliantID (Package Limited)75A l Automotive Qualified *

 8.1. Size:398K  international rectifier
auirfb8409 auirfs8409 auirfsl8409.pdfpdf_icon

AUIRFB3207

AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Li

 8.2. Size:278K  international rectifier
auirfb4410.pdfpdf_icon

AUIRFB3207

PD - 97598AUTOMOTIVE GRADEAUIRFB4410HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS100V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.8.0m 175C Operating Temperature max. 10m Fast SwitchingG Repetitive Avalanche Allowed up toID (Silicon Limited)88ATjmax Lead-Free, RoHS CompliantID (Package Limited)

 8.3. Size:211K  international rectifier
auirfba1405.pdfpdf_icon

AUIRFB3207

PD-97768AUTOMOTIVE GRADEAUIRFBA1405HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS 55Vl Low On-ResistanceRDS(on) typ. 4.3ml Dynamic dv/dt Ratingl 175C Operating Temperature max 5.0mGl Fast SwitchingID (Silicon Limited) 174Al Fully Avalanche RatedID (Package Limited) 95Al Repetitive Avalanche Allowed Sup to Tjmaxl Lead-Free, RoHS

Другие MOSFET... AUIRF7739L2 , AUIRF7805Q , AUIRF9540N , AUIRF9Z34N , AUIRFB3004 , AUIRFB3006 , AUIRFB3077 , AUIRFB3206 , IRFZ48N , AUIRFB3207Z , AUIRFB3306 , AUIRFB3307Z , AUIRFB3607 , AUIRFB3806 , AUIRFB4110 , AUIRFB4115 , AUIRFB4127 .

History: SSM6J412TU | STF28NM50N | TPC65R170M | HFP2N60S | IXTH02N450HV | HGK020N10S | SVF18NE50PN

 

 
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