AUIRFB3207 MOSFET. Datasheet pdf. Equivalent
Type Designator: AUIRFB3207
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 75 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 170 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 180 nC
Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm
Package: TO220AB
AUIRFB3207 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AUIRFB3207 Datasheet (PDF)
5.1. auirf5210s.pdf 
Size:236K _international_rectifier
AUTOMOTIVE GRADE AUIRF5210S Features HEXFET® Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m G l 175°C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
