Справочник MOSFET. AUIRFP2907

 

AUIRFP2907 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AUIRFP2907
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 470 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 209 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 190 ns
   Cossⓘ - Выходная емкость: 2100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO247AC
     - подбор MOSFET транзистора по параметрам

 

AUIRFP2907 Datasheet (PDF)

 ..1. Size:221K  international rectifier
auirfp2907.pdfpdf_icon

AUIRFP2907

PD -97692AAUTOMOTIVE GRADEAUIRFP2907HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS75Vl Low On-ResistanceRDS(on) typ.3.6ml Dynamic dV/dT Ratingl 175C Operating Temperaturemax 4.5mGl Fast SwitchingID (Silicon Limited)209Al Fully Avalanche RatedSID (Package Limited)90Al Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, R

 0.1. Size:286K  international rectifier
auirfp2907z.pdfpdf_icon

AUIRFP2907

PD - 97550AUIRFP2907ZAUTOMOTIVE GRADEHEXFET Power MOSFETDFeaturesV(BR)DSS75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) max.4.5mG 175C Operating Temperature Fast SwitchingID170AS Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed for

 7.1. Size:207K  international rectifier
auirfp2602.pdfpdf_icon

AUIRFP2907

PD - 96420AUTOMOTIVE GRADEAUIRFP2602HEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 24V Low On-Resistance 175C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS CompliantID (Silicon Limited) 380A Automotive Qualified *SID (Package Limited) 180A Description

 8.1. Size:275K  international rectifier
auirfp4004.pdfpdf_icon

AUIRFP2907

PD - 96407AAUTOMOTIVE GRADEAUIRFP4004HEXFET Power MOSFETFeatures Advanced Process Technology VDSS 40VD Low On-ResistanceRDS(on) typ. 1.35m 175C Operating Temperature max. 1.70m Fast SwitchingGID (Silicon Limited)350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantID (Package Limited) 195AS Automotive Qualified *DescriptionDS

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: CS4N65F | IRL8114PBF | CS5N70FA9 | RU60100R | SQM85N03-06P | 2SK3846 | SIR836DP

 

 
Back to Top

 


 
.