AUIRFP2907 Datasheet. Specs and Replacement

Type Designator: AUIRFP2907  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 470 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 209 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 2100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO247AC

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AUIRFP2907 substitution

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AUIRFP2907 datasheet

 ..1. Size:221K  international rectifier
auirfp2907.pdf pdf_icon

AUIRFP2907

PD -97692A AUTOMOTIVE GRADE AUIRFP2907 HEXFET Power MOSFET Features l Advanced Planar Technology D V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 3.6m l Dynamic dV/dT Rating l 175 C Operating Temperature max 4.5m G l Fast Switching ID (Silicon Limited) 209A l Fully Avalanche Rated S ID (Package Limited) 90A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, R... See More ⇒

 0.1. Size:286K  international rectifier
auirfp2907z.pdf pdf_icon

AUIRFP2907

PD - 97550 AUIRFP2907Z AUTOMOTIVE GRADE HEXFET Power MOSFET D Features V(BR)DSS 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 4.5m G 175 C Operating Temperature Fast Switching ID 170A S Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for... See More ⇒

 7.1. Size:207K  international rectifier
auirfp2602.pdf pdf_icon

AUIRFP2907

PD - 96420 AUTOMOTIVE GRADE AUIRFP2602 HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 24V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS Compliant ID (Silicon Limited) 380A Automotive Qualified * S ID (Package Limited) 180A Description... See More ⇒

 8.1. Size:275K  international rectifier
auirfp4004.pdf pdf_icon

AUIRFP2907

PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V D Low On-Resistance RDS(on) typ. 1.35m 175 C Operating Temperature max. 1.70m Fast Switching G ID (Silicon Limited) 350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 195A S Automotive Qualified * Description D S... See More ⇒

Detailed specifications: AUIRFBA1405P, AUIRFI3205, AUIRFIZ34N, AUIRFIZ44N, AUIRFL014N, AUIRFL024N, AUIRFP064N, AUIRFP1405, IRF540, AUIRFP2907Z, AUIRFP3077, AUIRFP3206, AUIRFP3306, AUIRFP4004, AUIRFP4110, AUIRFP4227, AUIRFP4310Z

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