DISCRETE SEMICONDUCTORSDATA SHEETBS108N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBS108D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS drain

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BS108N-channel enhancement modevertical D-MOS transistorProduct specification 2001 May 18Supersedes data of 1997 Jun 17Philips Semiconductors Product specificationN-channel enhancement modeBS108vertical D-MOS transistorFEATURES PINNING - SOT54 Direct interface to C-MOS, TTL, etc.PIN DESCRIPTION High-spee

BS108Small Signal MOSFET250 mAmps, 200 Volts,Logic LevelN-Channel TO-92http://onsemi.comThis MOSFET is designed for high voltage, high speed switching250 mAMPSapplications such as line drivers, relay drivers, CMOS logic,200 VOLTSmicroprocessor or TTL to high voltage interface and high voltagedisplay drivers. RDS(on) = 8 WFeaturesN-Channel Low Drive Requirement, VG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS108/DBS108Logic Level TMOSNChannel Enhancement ModeThis TMOS FET is designed for high voltage, high speedswitching applications such as line drivers, relay drivers, CMOS200 VOLTSlogic, microprocessor or TTL to high voltage interface and highNCHANNEL TMOSvoltage display drivers.POWER FET1 DRAIN

BS108Small Signal MOSFET250 mAmps, 200 Volts,Logic LevelN-Channel TO-92http://onsemi.comThis MOSFET is designed for high voltage, high speed switching250 mAMPSapplications such as line drivers, relay drivers, CMOS logic,200 VOLTSmicroprocessor or TTL to high voltage interface and high voltagedisplay drivers. RDS(on) = 8 WFeaturesN-Channel Low Drive Requirement, VG