BS108
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BS108
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.8
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.25
A
Tjⓘ - Максимальная температура канала: 150
°C
Cossⓘ - Выходная емкость: 80
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5
Ohm
Тип корпуса:
TO92
Аналог (замена) для BS108
BS108
Datasheet (PDF)
..1. Size:49K philips
bs108 cnv 2.pdf DISCRETE SEMICONDUCTORSDATA SHEETBS108N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBS108D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS drain
..2. Size:54K philips
bs108.pdf DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BS108N-channel enhancement modevertical D-MOS transistorProduct specification 2001 May 18Supersedes data of 1997 Jun 17Philips Semiconductors Product specificationN-channel enhancement modeBS108vertical D-MOS transistorFEATURES PINNING - SOT54 Direct interface to C-MOS, TTL, etc.PIN DESCRIPTION High-spee
..3. Size:91K onsemi
bs108.pdf BS108Small Signal MOSFET250 mAmps, 200 Volts,Logic LevelN-Channel TO-92http://onsemi.comThis MOSFET is designed for high voltage, high speed switching250 mAMPSapplications such as line drivers, relay drivers, CMOS logic,200 VOLTSmicroprocessor or TTL to high voltage interface and high voltagedisplay drivers. RDS(on) = 8 WFeaturesN-Channel Low Drive Requirement, VG
0.1. Size:58K motorola
bs108rev0.pdf MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS108/DBS108Logic Level TMOSNChannel Enhancement ModeThis TMOS FET is designed for high voltage, high speedswitching applications such as line drivers, relay drivers, CMOS200 VOLTSlogic, microprocessor or TTL to high voltage interface and highNCHANNEL TMOSvoltage display drivers.POWER FET1 DRAIN
0.2. Size:86K onsemi
bs108g bs108zl1g.pdf BS108Small Signal MOSFET250 mAmps, 200 Volts,Logic LevelN-Channel TO-92http://onsemi.comThis MOSFET is designed for high voltage, high speed switching250 mAMPSapplications such as line drivers, relay drivers, CMOS logic,200 VOLTSmicroprocessor or TTL to high voltage interface and high voltagedisplay drivers. RDS(on) = 8 WFeaturesN-Channel Low Drive Requirement, VG
Другие MOSFET... BFC63
, BFR30
, BFR31
, BFR84
, BFS28R
, BFT46
, BS107P
, BS107PT
, AON7506
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, BS170F
, BS170P
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, BS250P
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, BSN254
, BSN254A
.