Справочник MOSFET. IRF7702

 

IRF7702 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF7702
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 1040 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
   Тип корпуса: TSSOP8

 Аналог (замена) для IRF7702

 

 

IRF7702 Datasheet (PDF)

 ..1. Size:138K  international rectifier
irf7702.pdf

IRF7702
IRF7702

PD - 93849CPROVISIONALIRF7702HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID -1.8V Rated0.014@VGS = -4.5V -8.0A P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0A Very Small SOIC Package0.027@VGS = -1.8V -5.8A Low Profile (

 ..2. Size:184K  international rectifier
irf7702pbf.pdf

IRF7702
IRF7702

PD-96027IRF7702PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl -1.8V Rated0.014@VGS = -4.5V -8.0Al P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0Al Very Small SOIC Package0.027@VGS = -1.8V -5.8Al Low Profile (

 0.1. Size:227K  international rectifier
irf7702gpbf.pdf

IRF7702
IRF7702

PD- 96147IRF7702GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl -1.8V Rated0.014@VGS = -4.5V -8.0Al P-Channel MOSFET-12V 0.019@VGS = -2.5V -7.0Al Very Small SOIC Package0.027@VGS = -1.8V -5.8Al Low Profile (

 8.1. Size:141K  international rectifier
irf7701.pdf

IRF7702
IRF7702

PD - 93940IRF7701HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET0.011@VGS = -4.5V -10A Very Small SOIC Package-12V 0.015@VGS = -2.5V -8.5A Low Profile (

 8.2. Size:234K  international rectifier
irf7705gpbf.pdf

IRF7702
IRF7702

PD- 96142AIRF7705GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-30V 18 @VGS = -10V -8.0Al Low Profile (

 8.3. Size:234K  international rectifier
irf7705pbf.pdf

IRF7702
IRF7702

PD-96022AIRF7705PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 18 @VGS = -10V -8.0Al Very Small SOIC Package 30 @VGS = -4.5V -6.0Al Low Profile (

 8.4. Size:193K  international rectifier
irf7704.pdf

IRF7702
IRF7702

PD- 94160IRF7704HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-40V 46@VGS = -10V -4.6A Very Small SOIC Package74@VGS = -4.5V -3.7A Low Profile (

 8.5. Size:146K  international rectifier
irf7705.pdf

IRF7702
IRF7702

PD - 94001AIRF7705HEXFET Power MOSFET Ultra Low On-Resistance)VDSS RDS(on) max (m) ID))) P-Channel MOSFET-30V 18 @VGS = -10V -8.0A Very Small SOIC Package 30 @VGS = -4.5V -6.0A Low Profile (

 8.6. Size:210K  international rectifier
irf7703.pdf

IRF7702
IRF7702

PD - 94221 BIRF7703HEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 28@VGS = -10V -6.0Al Very Small SOIC Package45@VGS = -4.5V -4.8Al Low Profile (

 8.7. Size:234K  international rectifier
irf7706gpbf.pdf

IRF7702
IRF7702

PD-96143AIRF7706GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max IDl Very Small SOIC Package -30V 22m@VGS = -10V -7.0Al Low Profile (

 8.8. Size:236K  international rectifier
irf7701gpbf.pdf

IRF7702
IRF7702

PD - 96146AIRF7701GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFET VDSS RDS(on) max IDl Very Small SOIC Package0.011@VGS = -4.5V -10Al Low Profile (

 8.9. Size:151K  international rectifier
irf7707.pdf

IRF7702
IRF7702

PD -93996IRF7707HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -20V 22m@VGS = -4.5V -7.0A Very Small SOIC Package33m@VGS = -2.5V -6.0A Low Profile (

 8.10. Size:237K  international rectifier
irf7703pbf.pdf

IRF7702
IRF7702

PD-96026AIRF7703PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 28@VGS = -10V -6.0Al Very Small SOIC Package45@VGS = -4.5V -4.8Al Low Profile (

 8.11. Size:241K  international rectifier
irf7700gpbf.pdf

IRF7702
IRF7702

PD - 96155AIRF7700GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET-20V 0.015@VGS = -4.5V -8.6Al Very Small SOIC Package0.024@VGS = -2.5V -7.3Al Low Profile (

 8.12. Size:149K  international rectifier
irf7700.pdf

IRF7702
IRF7702

PD - 93894AIRF7700HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-20V 0.015@VGS = -4.5V -8.6A Very Small SOIC Package0.024@VGS = -2.5V -7.3A Low Profile (

 8.13. Size:237K  international rectifier
irf7703gpbf.pdf

IRF7702
IRF7702

PD- 96148AIRF7703GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-40V 28@VGS = -10V -6.0Al Low Profile (

 8.14. Size:244K  international rectifier
irf7704pbf.pdf

IRF7702
IRF7702

PD- 96025AIRF7704PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 46@VGS = -10V -4.6Al Very Small SOIC Package74@VGS = -4.5V -3.7Al Low Profile (

 8.15. Size:152K  international rectifier
irf7706.pdf

IRF7702
IRF7702

PD -94003IRF7706HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET -30V 22m@VGS = -10V -7.0A Very Small SOIC Package36m@VGS = -4.5V -5.6A Low Profile (

 8.16. Size:238K  international rectifier
irf7706pbf.pdf

IRF7702
IRF7702

PD-96023AIRF7706PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max IDl P-Channel MOSFET -30V 22m@VGS = -10V -7.0Al Very Small SOIC Package36m@VGS = -4.5V -5.6Al Low Profile (

 8.17. Size:245K  international rectifier
irf7704gpbf.pdf

IRF7702
IRF7702

PD-96149IRF7704GPbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-40V 46@VGS = -10V -4.6Al Very Small SOIC Package74@VGS = -4.5V -3.7Al Low Profile (

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