IRF7343Q - параметры транзистора MOSFET, его аналоги, datasheet

IRF7343Q Datasheet (PDF)

..1. Size:238K international rectifier
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PD - 96110IRF7343QPBFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETN-Ch P-Ch1l Ultra Low On-Resistance 8S1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 55V -55V3 6l Available in Tape & Reel S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] QualifiedP-CHANNEL MOSFETRDS(on) 0.050 0.105l Lead-FreeTo

0.1. Size:225K 1
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PD - 96343BAUTOMOTIVE MOSFETAUIRF7343QHEXFET Power MOSFETFeaturesl Advanced Planar TechnologyN-Ch P-ChN-CHANNEL MOSFET1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFETV(BR)DSS55V -55V2 7G1 D1l Surface Mount3 6l Available in Tape & ReelS2 D2RDS(on) typ.0.043 0.095l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualif

0.2. Size:323K infineon
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AUTOMOTIVE GRADE AUIRF7343Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1VDSS 55V -55V Ultra Low On-Resistance 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.043 0.0953 6S2 D2 Dual N and P Channel MOSFET max. 0.050 0.10545G2 D2 Surface Mount P-CHANNEL MOSFETID 4.7A -3.4A Availabl

0.3. Size:3361K cn vbsemi
irf7343qtr.pdf pdf_icon

IRF7343QTRwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VG

Другие MOSFET... IRF7754G , IRF7509 , IRF7309 , IRF7105 , IRF7307 , IRF7105Q , IRF7389 , IRF7343I , EMB04N03H , IRF7309I , IRF7379I , IRF7319 , IRF7317 , IRF7379Q , IRF7309Q , IRF7507 , IRF7307Q .