IRF7379I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF7379I
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 25 nC
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 180 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: SO8
IRF7379I Datasheet (PDF)
irf7379ipbf.pdf
PD - 96089IRF7379IPbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifie
auirf7379q.pdf
AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in
irf7379qpbf.pdf
PD - 96111IRF7379QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6S2 D2l Available in Tape & Reell 150C Operating Temperature 45G2 D2P-CHANNEL MOSFETl Automotive [Q101] QualifiedRDS(on) 0.045 0.090l Lead-FreeTo
irf7379.pdf
PD - 91625IRF7379HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-Resistance S1 D12 7 Complimentary Half BridgeG1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2P-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced p
irf7379pbf.pdf
PD - 95300IRF7379PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifier
auirf7379q.pdf
AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in
irf7379tr.pdf
IRF7379TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918