Справочник MOSFET. SSM3K16FU

 

SSM3K16FU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM3K16FU
   Маркировка: DS
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.15 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
   Пороговое напряжение включения |Ugs(th)|: 1.1 V
   Максимально допустимый постоянный ток стока |Id|: 0.1 A
   Максимальная температура канала (Tj): 150 °C
   Выходная емкость (Cd): 9.8 pf
   Сопротивление сток-исток открытого транзистора (Rds): 3 Ohm
   Тип корпуса: SOT323 SC70 USM

 Аналог (замена) для SSM3K16FU

 

 

SSM3K16FU Datasheet (PDF)

 ..1. Size:149K  toshiba
 ssm3k16fu.pdf

SSM3K16FU SSM3K16FU

SSM3K16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FU High Speed Switching Applications Analog Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

 6.1. Size:148K  toshiba
 ssm3k16fs.pdf

SSM3K16FU SSM3K16FU

SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

 6.2. Size:88K  toshiba
 ssm3k16fv.pdf

SSM3K16FU SSM3K16FU

SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications nit: mmAnalog Switch Applications 1.20.05 Suitable for high-density mounting due to compact package 0.80.05 Low on-resistance : Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) 1Absolute Max

 7.1. Size:147K  toshiba
 ssm3k16te.pdf

SSM3K16FU SSM3K16FU

SSM3K16TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16TE High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)

 7.2. Size:157K  toshiba
 ssm3k16ct.pdf

SSM3K16FU SSM3K16FU

SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package 0.60.050.50.03 Low ON-resistance : Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute

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