Справочник MOSFET. SSM5N16FE

 

SSM5N16FE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM5N16FE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 9.8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: SOT553 ESV

 Аналог (замена) для SSM5N16FE

 

 

SSM5N16FE Datasheet (PDF)

 ..1. Size:132K  toshiba
 ssm5n16fe.pdf

SSM5N16FE SSM5N16FE

SSM5N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FE High Speed Switching Applications Unit: mmAnalog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

 6.1. Size:131K  toshiba
 ssm5n16fu.pdf

SSM5N16FE SSM5N16FE

SSM5N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N16FU High Speed Switching Applications Unit: mmAnalog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25

 8.1. Size:178K  toshiba
 ssm5n15fu.pdf

SSM5N16FE SSM5N16FE

SSM5N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FU High Speed Switching Applications Unit: mmAnalog Switch Applications Small package Low ON resistance : RDS (ON) = 4.0 (max) (@VGS = 4 V) : RDS (ON) = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source vol

 8.2. Size:153K  toshiba
 ssm5n15fe.pdf

SSM5N16FE SSM5N16FE

SSM5N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM5N15FE High Speed Switching Applications Unit: mmAnalog Switch Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDS

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