SSM6J06FU - описание и поиск аналогов

 ..1. Size:189K  toshiba
 ssm6j06fu.pdf 

SSM6J06FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J06FU Power Management Switch Unit mm High Speed Switching Applications Small package Low on resistance Ron = 0.5 max (V = -4 V) GS Ron = 0.7 max (V = -2.5 V) GS Low gate threshold voltage Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-sourc

 8.1. Size:136K  toshiba
 ssm6j07fu.pdf 

SSM6J07FU TOSHIBA Transistor Silicon P Channel MOS Type SSM6J07FU Power Management Switch Unit mm High Speed Switching Applications Small package Low on resistance R = 450 m (max) (V = -10 V) on GS Ron = 800 m (max) (VGS = -4 V) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS -30 V Gate-source voltage V

 8.2. Size:152K  toshiba
 ssm6j08fu.pdf 

SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power Management Switch Unit mm DC-DC Converter Small Package Low on Resistance R = 0.18 (max) (@V = -4 V) on GS R = 0.26 (max) (@V = -2.5 V) on GS Low Gate Threshold Voltage Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-Sour

 9.1. Size:222K  toshiba
 ssm6j771g.pdf 

SSM6J771G MOSFETs Silicon P-Channel MOS SSM6J771G SSM6J771G SSM6J771G SSM6J771G 1. Applications 1. Applications 1. Applications 1. Applications BATFETs Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) High VGSS voltage 12V (2) High VDSS voltage -20V (3) Low drain-source on-resistance RDS(ON) = 26 m (typ.) (@VGS = -4.5 V,ID = -3.

 9.2. Size:240K  toshiba
 ssm6j507nu.pdf 

SSM6J507NU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J507NU SSM6J507NU SSM6J507NU SSM6J507NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 20 m (max) (@VGS = -10 V) RDS(ON) = 28 m (max) (@VGS = -4.5

 9.3. Size:277K  toshiba
 ssm6j51tu.pdf 

SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J51TU High Current Switching Applications Unit mm Suitable for high-density mounting due to compact package Low on-resistance Ron = 54 m (max) (@VGS = -2.5 V) 85 m (max) (@VGS = -1.8 V) 150m (max) (@VGS = -1.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

 9.4. Size:197K  toshiba
 ssm6j402tu.pdf 

SSM6J402TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J402TU DC/DC Converter Application High-Speed Switching Applications unit mm 2.1 0.1 4.0 V drive 1.7 0.1 Low ON-resistance RDS(ON) = 225m max (@VGS = -4 V) RDS(ON) = 117m max (@VGS = -10 V) 1 6 2 5 Absolute Maximum Ratings (Ta = 25 C) 3 4 Characteristic Symbol Rating

 9.5. Size:305K  toshiba
 ssm6j206fe.pdf 

SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE Power Management Switch Applications Unit mm High-Speed Switching Applications 1.8 V drive Low ON-resistance Ron = 320 m (max) (@VGS = -1.8 V) Ron = 186 m (max) (@VGS = -2.5 V) R = 130 m (max) (@V = -4.0 V) on GS Lead (Pb) free Maximum Ratings (Ta = 25 C) Cha

 9.6. Size:152K  toshiba
 ssm6j25fe.pdf 

SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Unit mm 1.6 0.05 Optimum for high-density mounting in small packages Low on-resistance Ron = 260m (max) (@VGS = -4 V) 1.2 0.05 Ron = 430m (max) (@VGS = -2.5 V) 1 6 5 Maximum Ratings (Ta = 25 C) 2 4 3 Characteristics Symbol Rating Uni

 9.7. Size:217K  toshiba
 ssm6j410tu.pdf 

SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J410TU Power Management Switch Applications Unit mm High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m (max) (@VGS = 4 V) RDS(ON) = 216m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-Sou

 9.8. Size:221K  toshiba
 ssm6j409tu.pdf 

SSM6J409TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM6J409TU Power Management Switch Applications High-Speed Switching Applications Unit mm 1.5V drive Low ON-resistance Ron = 72.3m (max) (@VGS = -1.5 V) Ron = 46.2m (max) (@VGS = -1.8 V) Ron = 30.2m (max) (@VGS = -2.5 V) Ron = 22.1m (max) (@VGS = -4.5 V) Absolut

 9.9. Size:370K  toshiba
 ssm6j512nu.pdf 

SSM6J512NU MOSFETs Silicon P-Channel MOS SSM6J512NU SSM6J512NU SSM6J512NU SSM6J512NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 24.0 m (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 m (typ.) (@VGS = -2.5 V

 9.10. Size:295K  toshiba
 ssm6j511nu.pdf 

SSM6J511NU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J511NU SSM6J511NU SSM6J511NU SSM6J511NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 13.5 m (max) (@VGS = -2.5 V) RDS(ON) = 10 m (max) (@VGS =

 9.11. Size:250K  toshiba
 ssm6j23fe.pdf 

SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J23FE High Current Switching Applications Unit mm DC-DC Converter Suitable for high-density mounting due to compact package Low on-resistance Ron = 160 m (max) (@VGS = -4.0 V) Ron = 210 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Dra

 9.12. Size:299K  toshiba
 ssm6j53fe.pdf 

SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE High-Speed Switching Applications Unit mm Power Management Switch Applications 1.6 0.05 1.2 0.05 1.5 V drive Suitable for high-density mounting due to compact package 1 6 Low on-resistance Ron = 136 m (max) (@VGS = -2.5 V) Ron = 204 m (max) (@VGS = -1.8 V) 5 2

 9.13. Size:202K  toshiba
 ssm6j213fe.pdf 

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J213FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25

 9.14. Size:237K  toshiba
 ssm6j503nu.pdf 

SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J503NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON)= 89.6 m (max) (@VGS = -1.5 V) RDS(ON) = 57.9 m (max) (@VGS = -1.8 V) RDS(ON) = 41.7 m (max) (@VGS = -2.5 V) RDS(ON) = 32.4 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C

 9.15. Size:218K  toshiba
 ssm6j205fe.pdf 

SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications Unit mm 1.8V drive P-ch 2-in-1 Low ON-resistance Ron = 460 m (max) (@VGS = -1.8 V) Ron = 306 m (max) (@VGS = -2.5 V) Ron = 234 m (max) (@VGS = -4.0 V) Maximum Ratings (Ta = 25 C) Characteristic Sym

 9.16. Size:205K  toshiba
 ssm6j412tu.pdf 

SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J412TU Power Management Switch Applications Unit mm 2.1 0.1 1.5-V drive 1.7 0.1 Low ON-resistance RDS(ON) = 99.6 m (max) (@VGS = -1.5 V) RDS(ON) = 67.8 m (max) (@VGS = -1.8 V) RDS(ON) = 51.4 m (max) (@VGS = -2.5 V) 1 6 RDS(ON) = 42.7 m (max) (@VGS = -4.5 V) 5 2 A

 9.17. Size:226K  toshiba
 ssm6j215fe.pdf 

SSM6J215FE MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J215FE SSM6J215FE SSM6J215FE SSM6J215FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =

 9.18. Size:157K  toshiba
 ssm6j21tu.pdf 

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J21TU High Current Switching Applications Unit mm Suitable for high-density mounting due to compact package Low on resistance Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS 12

 9.19. Size:215K  toshiba
 ssm6j216fe.pdf 

SSM6J216FE MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J216FE SSM6J216FE SSM6J216FE SSM6J216FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 88.1 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS

 9.20. Size:236K  toshiba
 ssm6j502nu.pdf 

SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS ) SSM6J502NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON) = 60.5 m (max) (@VGS = -1.5 V) RDS(ON) = 38.4 m (max) (@VGS = -1.8 V) RDS(ON) = 28.3 m (max) (@VGS = -2.5 V) RDS(ON) = 23.1 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C

 9.21. Size:241K  toshiba
 ssm6j50tu.pdf 

SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J50TU High Current Switching Applications Unit mm Compact package suitable for high-density mounting Low on-resistance Ron = 205m (max) (@VGS = -2.0 V) Ron = 100m (max) (@VGS = -2.5 V) Ron = 64m (max) (@VGS = -4.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Ra

 9.22. Size:205K  toshiba
 ssm6j501nu.pdf 

SSM6J501NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS ) SSM6J501NU Power Management Switch Applications Unit mm 1.5V drive Low ON-resistance RDS(ON) = 43.0 m (max) (@VGS = -1.5 V) RDS(ON) = 26.5 m (max) (@VGS = -1.8 V) RDS(ON) = 19.0 m (max) (@VGS = -2.5 V) RDS(ON) = 15.3 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25 C

 9.23. Size:235K  toshiba
 ssm6j505nu.pdf 

SSM6J505NU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J505NU SSM6J505NU SSM6J505NU SSM6J505NU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 61 m (max) (@VGS = -1.2 V) RDS(ON) = 30 m (max) (@VGS = -

 9.24. Size:154K  toshiba
 ssm6j26fe.pdf 

SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching Applications Unit mm 1.6 0.05 Optimum for high-density mounting in small packages Low on-resistance Ron = 230m (max) (@VGS = -4 V) 1.2 0.05 Ron = 330m (max) (@VGS = -2.5 V) Ron = 980m (max) (@VGS = -1.8 V) 1 6 5 Maximum Ratings (Ta = 25 C) 2 4

 9.25. Size:207K  toshiba
 ssm6j214fe.pdf 

SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J214FE Power Management Switch Applications Unit mm 1.8 V drive Low ON-resistance RDS(ON) = 149.6 m (max) (@VGS = -1.8 V) RDS(ON) = 77.6 m (max) (@VGS = -2.5 V) RDS(ON) = 57.0 m (max) (@VGS = -4.5 V) RDS(ON) = 50.0 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta

 9.26. Size:190K  toshiba
 ssm6j212fe.pdf 

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J212FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 94.0 m (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta

 9.27. Size:215K  toshiba
 ssm6j414tu.pdf 

SSM6J414TU MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J414TU SSM6J414TU SSM6J414TU SSM6J414TU 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 54 m (max) (@VGS = -1.5 V) RDS(ON) = 36 m (max) (@VGS = -

 9.28. Size:312K  toshiba
 ssm6j207fe.pdf 

SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE High-Speed Switching Applications Unit mm 4 V drive Low ON-resistance Ron = 491 m (max) (@VGS = -4 V) Ron = 251 m (max) (@VGS = -10 V) Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain source voltage VDS -30 V Gate source voltage VGSS 20 V DC ID -1.4

 9.29. Size:197K  toshiba
 ssm6j401tu.pdf 

SSM6J401TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J401TU DC/DC Converter Application High-Speed Switching Applications unit mm 2.1 0.1 4.0V drive 1.7 0.1 Low ON-resistance RDS(ON) = 145m (max) (@VGS = -4 V) RDS(ON) = 73m (max) (@VGS = -10 V) 1 6 2 5 Absolute Maximum Ratings (Ta = 25 C) 3 4 Characteristic Symbol Rating