SSM6K411TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM6K411TU
Маркировка: KNI
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.2 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 9.4 nC
Выходная емкость (Cd): 240 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
Тип корпуса: UF6
Аналог (замена) для SSM6K411TU
SSM6K411TU Datasheet (PDF)
ssm6k411tu.pdf
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SSM6K411TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K411TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 2.5-V drive 2.10.1 Low ON-resistanceRDS(ON) = 23.8 m (max) (@VGS = 2.5 V) 1.70.1 RDS(ON) = 14.3 m (max) (@VGS = 3.5 V) RDS(ON) = 12 m (max) (@VGS = 4.5 V) 1 62 5Absolute Maximum
ssm6k406tu.pdf
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SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU High-Speed Switching Applications 4.5-V drive Unit: mm Low ON-resistance: Ron = 38.5 m (max) (@VGS = 4.5 V) 2.10.1 Ron = 25.0 m (max) (@VGS = 10 V) 1.70.1Absolute Maximum Ratings (Ta = 25C) 1 6Characteristics Symbol Rating Unit2 5Drainsource voltage VDSS 30 V3 4
ssm6k403tu.pdf
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SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU Power Management Switch Applications UNIT: mm High-Speed Switching Applications 2.10.11.70.11 6 1.5V drive Low ON-resistance:Ron = 66m (max) (@VGS = 1.5V) 2 5Ron = 43m (max) (@VGS = 1.8V) 3 4Ron = 32m (max) (@VGS = 2.5V) Ron = 28m (max) (@VGS = 4.0V) Absolute
ssm6k404tu.pdf
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SSM6K404TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K404TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 147 m (max) (@VGS = 1.5 V) 2.10.1RDS(ON) = 100 m (max) (@VGS = 1.8 V) 1.70.1RDS(ON) = 70 m (max) (@VGS = 2.5 V) RDS(ON) = 55 m (max) (@VGS =
ssm6k405tu.pdf
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SSM6K405TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K405TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 307 m (max) (@VGS = 1.5V) 2.10.1Ron = 214 m (max) (@VGS = 1.8V) 1.70.1Ron = 164 m (max) (@VGS = 2.5V) Ron = 126 m (max) (@VGS = 4.0V) 1 6Abso
ssm6k407tu.pdf
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SSM6K407TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K407TU Unit: mm DC-DC Converter, Relay Drive and Motor Drive Applications 2.10.11.70.11 6 4V drive Low ON-resistance :Ron = 440m (max) (@VGS = 4 V) 2 5:Ron = 300m (max) (@VGS = 10 V) 3 4Absolute Maximum Ratings (Ta = 25) (Note) 1,2,5,6 : Drain Characteristic Symbol Rating U
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![SSM6K411TU](https://alltransistors.com/images/us.png)
![SSM6K411TU](https://alltransistors.com/images/es.png)
![SSM6K411TU](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
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