BUK446-800A - параметры транзистора MOSFET, его аналоги, datasheet

BUK446-800A Datasheet (PDF)

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Philips Semiconductors Product Specification PowerMOS transistor BUK446-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK446 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 2.0 1.7

4.1. Size:230K inchange semiconductor
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isc N-Channel MOSFET Transistor BUK446-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25

7.1. Size:50K philips
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Philips Semiconductors Product Specification PowerMOS transistor BUK446-1000B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 1000 VThe device is intended for use in ID Drain current (DC) 1.5 ASwitched Mode Power Supplies Ptot Total power dissipation

Другие MOSFET... BUK436W-800A , BUK436W-800B , BUK438W-800A , BUK438W-800B , BUK444-800A , BUK444-800B , BUK445-200A , BUK446-1000B , 50N06 , BUK446-800B , BUK452-100A , BUK453-100A , BUK454-800A , BUK454-800B , BUK455-100A , BUK455-200A , BUK456-1000B .