TK50P04M1. Аналоги и основные параметры

Наименование производителя: TK50P04M1

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 60 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 22 ns

Cossⓘ - Выходная емкость: 420 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0087 Ohm

Тип корпуса: DPAK

Аналог (замена) для TK50P04M1

- подборⓘ MOSFET транзистора по параметрам

 

TK50P04M1 даташит

 ..1. Size:238K  toshiba
 tk50p04m1.pdf pdf_icon

TK50P04M1

TK50P04M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK50P04M1 TK50P04M1 TK50P04M1 TK50P04M1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 9.4 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 6.7 m (t

 8.1. Size:242K  toshiba
 tk50p03m1.pdf pdf_icon

TK50P04M1

TK50P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK50P03M1 TK50P03M1 TK50P03M1 TK50P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop PCs 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 5.8 m (typ.) (VGS = 10

 8.2. Size:696K  first silicon
 ftk50p03pdfn56.pdf pdf_icon

TK50P04M1

SEMICONDUCTOR FTK50P03PDFN56 TECHNICAL DATA P-Channel Power MOSFET PDFN5 6-8L DESCRIPTION The FTK50P03PDFN56 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES High density cell design for ultra low RDS(ON) Excellent package for good heat dissipation Fully characte

 8.3. Size:612K  jiejie micro
 jmtk50p02a.pdf pdf_icon

TK50P04M1

JMTK50P02A Description JMT P-channel MOSFET Features Application V =-20V, I =-60A PWM Applications DS D R

ПОКАЗАТЬ ЕЩЁ

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