Справочник MOSFET. 2SK2545

 

2SK2545 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK2545
   Маркировка: K2545
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.25 Ohm
   Тип корпуса: TO220NIS

 Аналог (замена) для 2SK2545

 

 

2SK2545 Datasheet (PDF)

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 2sk2545.pdf

2SK2545 2SK2545

2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2545 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10

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 2sk2541.pdf

2SK2545 2SK2545

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 2sk2544.pdf

2SK2545 2SK2545

2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2544 Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 8.3. Size:372K  toshiba
 2sk2549.pdf

2SK2545 2SK2545

2SK2549 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2549 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5 V gate drive Low drain-source ON resistance : R = 0.29 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode : V

 8.4. Size:409K  toshiba
 2sk2543.pdf

2SK2545 2SK2545

2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2543 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.75 (typ.) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS DMa

 8.5. Size:409K  toshiba
 2sk2542.pdf

2SK2545 2SK2545

2SK2542 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2542 Switching Regulator Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.75 (typ.) DS (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 500 V) DS Enhancement-mode : V = 2.0~4.0 V (V = 10 V, I

 8.6. Size:259K  inchange semiconductor
 2sk2543.pdf

2SK2545 2SK2545

isc N-Channel MOSFET Transistor 2SK2543FEATURESStatic drain-source on-resistance:RDS(on) 0.85Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS

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History: MMBFJ271 | JCS7HN65B | MMBF5103 | MTN5N50I3

 

 
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