2SK2782 - аналоги, параметры транзистора - Справочник транзисторов

2SK2782 даташит

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2SK2782 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2782 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gate drive Low drain-source ON resistance R = 0.039 (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancemen

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2sk2789.pdf pdf_icon

2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2789 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gate drive Low drain-source ON resistance R = 66 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhancement

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r07ds0511ej 2sk2788.pdf pdf_icon

Preliminary Datasheet 2SK2788 R07DS0511EJ0300 (Previous REJ03G1033-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jul 27, 2011 Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PLZZ0004CA-A (Package name UPAK) D 1

8.3. Size:78K renesas
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2SK2788 Silicon N Channel MOS FET High Speed Power Switching REJ03G1033-0200 (Previous ADE-208-538) Rev.2.00 Sep.07,2005 Features Low on-resistance RDS(on) = 0.12 typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code PLZZ0004CA-A (Package name UPAK R ) D 1 2 1. Gate 3 2. Dra