Справочник MOSFET. 2SK3907

 

2SK3907 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK3907

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 150 W

Предельно допустимое напряжение сток-исток (Uds): 500 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 23 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 60 nC

Время нарастания (tr): 12 ns

Выходная емкость (Cd): 420 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.23 Ohm

Тип корпуса: TO3P

Аналог (замена) для 2SK3907

 

 

2SK3907 Datasheet (PDF)

1.1. 2sk3907.pdf Size:213K _toshiba

2SK3907
2SK3907

2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII ?-MOSVI) 2SK3907 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 0.18 ? (typ.) • High forward transfer admittance: |Yfs| = 12 S (typ.) • Low leakage current: IDSS = 500 ?A (VDS = 500 V) • Enhancement model: Vth = 2.0

4.1. 2sk3902-zk.pdf Size:276K _update

2SK3907
2SK3907

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. 2sk3901-zk.pdf Size:146K _update

2SK3907
2SK3907

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3901 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3901 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3901-ZK TO-263 (MP-25ZK) FEATURES • Super low On-state resistance (TO-263) RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(

 4.3. 2sk3900-zp.pdf Size:148K _update

2SK3907
2SK3907

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP) FEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(

4.4. 2sk3906.pdf Size:179K _toshiba

2SK3907
2SK3907

2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II ?-MOS VI) 2SK3906 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.) • Fast reverse recovery time: trr = 400 ns (typ.) • Low drain-source ON-resistance: RDS (ON) = 0.27 ? (typ.) • High forward transfer admittance: |Yfs| = 15S (typ.) • Low leakage current: IDSS =

 4.5. 2sk3904.pdf Size:238K _toshiba

2SK3907
2SK3907

2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3904 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.2 ? (typ.) • High forward transfer admittance: ?Yfs? = 9.5 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 450 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma

4.6. 2sk3903.pdf Size:239K _toshiba

2SK3907
2SK3907

2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3903 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.32 ? (typ.) • High forward transfer admittance: ?Yfs? = 7.5 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 600 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

4.7. 2sk3905.pdf Size:239K _toshiba

2SK3907
2SK3907

2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3905 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.25 ? (typ.) • High forward transfer admittance: ?Yfs? = 8.2 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 500 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

4.8. 2sk3900.pdf Size:151K _nec

2SK3907
2SK3907

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP) FEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(

Другие MOSFET... 2SK3797 , 2SK3844 , 2SK3846 , 2SK3847 , 2SK3869 , 2SK3903 , 2SK3904 , 2SK3905 , IRFP450 , 2SK3911 , 2SK3934 , 2SK3935 , 2SK3947 , 2SK3994 , 2SK4002 , 2SK4012 , 2SK4015 .

 

 

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