2SK3907 PDF and Equivalents Search

2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3907 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Low drain-source ON resistance RDS (ON) = 0.18 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 500 A (VDS = 500 V) Enhancement model Vth = ... See More ⇒

isc N-Channel MOSFET Transistor 2SK3907 FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.23 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3904 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.2 (typ.) High forward transfer admittance Yfs = 9.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Abso... See More ⇒

2SK3906 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II -MOS VI) 2SK3906 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Fast reverse recovery time trr = 400 ns (typ.) Low drain-source ON-resistance RDS (ON) = 0.27 (typ.) High forward transfer admittance Yfs = 15S (typ.) Low leakage current IDSS ... See More ⇒

2SK3903 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3903 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.32 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Abs... See More ⇒

2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3905 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.25 (typ.) High forward transfer admittance Yfs = 8.2 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Abs... See More ⇒

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP) FEATURES Super low on-state resistance (TO-263) RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP) FEATURES Super low on-state resistance (TO-263) RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(... See More ⇒

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3901 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3901 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3901-ZK TO-263 (MP-25ZK) FEATURES Super low On-state resistance (TO-263) RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 30 A) RDS(... See More ⇒

isc N-Channel MOSFET Transistor 2SK3904 FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

isc N-Channel MOSFET Transistor 2SK3900-ZP FEATURES Drain Current I = 82A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 8.0m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

isc N-Channel MOSFET Transistor 2SK3906 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.33 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

isc N-Channel MOSFET Transistor 2SK3903 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.44 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

isc N-Channel MOSFET Transistor 2SK3905 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.31 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒

isc N-Channel MOSFET Transistor 2SK3901-ZK FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒

isc N-Channel MOSFET Transistor 2SK3902-ZK FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 21m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒