Справочник MOSFET. 2SJ106

 

2SJ106 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SJ106

Маркировка: VY_VG_VL

Тип транзистора: JFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 0.15 W

Предельно допустимое напряжение сток-исток |Uds|: 50 V

Максимально допустимый постоянный ток стока |Id|: 0.014 A

Максимальная температура канала (Tj): 125 °C

Сопротивление сток-исток открытого транзистора (Rds): 270 Ohm

Тип корпуса: SMINI SC59

Аналог (замена) для 2SJ106

 

 

2SJ106 Datasheet (PDF)

0.1. 2sj106.pdf Size:283K _toshiba

2SJ106
2SJ106

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Unit: mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (O

9.1. 2sj109.pdf Size:242K _toshiba

2SJ106
2SJ106

9.2. 2sj107.pdf Size:321K _toshiba

2SJ106
2SJ106

2SJ107 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High input impedance: IGSS = 1.0 nA (max) (V = 25 V) GS Low R : R = 40 (typ.) DS (ON) DS (ON) Small package Complementary to 2SK366 Maximum Ratings (Ta == 25C) ==Chara

 9.3. 2sj104.pdf Size:382K _toshiba

2SJ106
2SJ106

2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High input impedance: IGSS = 1.0 nA (max) (V = 25 V) GS Low R = 40 (typ.) (I = -5 mA) DS (ON) DSS Complimentary to 2SK364 Maximum Ratings (Ta == 25C) ==Characteristics Symbo

9.4. 2sj105.pdf Size:286K _toshiba

2SJ106
2SJ106

2SJ105 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK330 S

 9.5. 2sj103.pdf Size:282K _toshiba

2SJ106
2SJ106

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = 50 V High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low R : R = 270 (typ.) (I = -5 mA) DS (ON) DS (ON) DSS Complimentary to 2SK246 Maxim

9.6. 2sj108.pdf Size:339K _toshiba

2SJ106
2SJ106

2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ amplifiers and MC head amplifiers. High |Y |: |Y | = 22 mS (typ.) fs fs(V = -10 V, V = 0, I = -3 mA) DS GS DSS Low noise: En = 0.95 nV/Hz1/2 (typ.) (V = -10 V, I = -1 mA, f = 1 kHz) DS D High i

9.7. 3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf Size:150K _no

2SJ106

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