2SJ106 Datasheet. Specs and Replacement
Type Designator: 2SJ106 📄📄
Type of Transistor: JFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Id| ⓘ - Maximum Drain Current: 0.014 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
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2SJ106 substitution
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2SJ106 datasheet
2sj106.pdf
2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Unit mm Analog Switch Applications Constant Current Applications Impedance Converter Applications High breakdown voltage VGDS = 50 V High input impedance I = 1.0 nA (max) (V = 30 V) GSS GS Low R R = 270 (typ.) (I = -5 mA) DS (ON) DS (O... See More ⇒
2sj108.pdf
2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit mm Recommended for first stages of EQ amplifiers and MC head amplifiers. High Y Y = 22 mS (typ.) fs fs (V = -10 V, V = 0, I = -3 mA) DS GS DSS Low noise En = 0.95 nV/Hz1/2 (typ.) (V = -10 V, I = -1 mA, f = 1 kHz) DS D High i... See More ⇒
2sj104.pdf
2SJ104 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current Unit mm and Impedance Converter Applications High input impedance IGSS = 1.0 nA (max) (V = 25 V) GS Low R = 40 (typ.) (I = -5 mA) DS (ON) DSS Complimentary to 2SK364 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbo... See More ⇒
Detailed specifications: SSM3K04FV, SSM3K15TE, SSM3K16TE, SSM3K311T, SSM3K7002AF, SSM6J215FE, 2SJ103, 2SJ105, K3569, 2SJ144, 2SK117, 2SK118, 2SK170, 2SK184, 2SK1875, 2SK208, 2SK209
Keywords - 2SJ106 MOSFET specs
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History: H5N2503P | IXTP4N90 | BUK6E3R2-55C | IXFH70N20Q3 | FDD5N50U | HM607K | AGM13T30A
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