H5N2507P. Аналоги и основные параметры
Наименование производителя: H5N2507P
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 200 ns
Cossⓘ - Выходная емкость: 640 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
Тип корпуса: TO3P
Аналог (замена) для H5N2507P
- подборⓘ MOSFET транзистора по параметрам
H5N2507P даташит
h5n2507p.pdf
Preliminary Datasheet H5N2507P R07DS0877EJ0200 (Previous RJJ03G0646-0100) 250V - 50A - MOS FET Rev.2.00 High Speed Power Switching Sep 12, 2012 Features Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25 C) Low leakage current High speed switching Low gate charge Built-in fast recovery diode Outline RENESAS Package code
rej03g1107 h5n2505dldsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1108 h5n2508dldsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1109 h5n2509pds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие IGBT... H5N2301PF, H5N2305P, H5N2305PF, H5N2306PF, H5N2504DL, H5N2504DS, H5N2505DL, H5N2505DS, IRF740, H5N2508DL, H5N2508DS, H5N2509P, H5N2509PF, H5N2510DL, H5N2510DS, H5N2514P, H5N2515P
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