H5N2507P Datasheet and Replacement
Type Designator: H5N2507P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO3P
H5N2507P substitution
H5N2507P Datasheet (PDF)
h5n2507p.pdf

Preliminary Datasheet H5N2507P R07DS0877EJ0200(Previous: RJJ03G0646-0100)250V - 50A - MOS FET Rev.2.00High Speed Power Switching Sep 12, 2012Features Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25C) Low leakage current High speed switching Low gate charge Built-in fast recovery diode Outline RENESAS Package code:
rej03g1107 h5n2505dldsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1108 h5n2508dldsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1109 h5n2509pds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: H5N2301PF , H5N2305P , H5N2305PF , H5N2306PF , H5N2504DL , H5N2504DS , H5N2505DL , H5N2505DS , IRF740 , H5N2508DL , H5N2508DS , H5N2509P , H5N2509PF , H5N2510DL , H5N2510DS , H5N2514P , H5N2515P .
History: IPA60R190E6 | AP4407GP | SWMI4N60D | QM4014D | IXFH110N15T2 | DMG4932LSD | QM09N65F
Keywords - H5N2507P MOSFET datasheet
H5N2507P cross reference
H5N2507P equivalent finder
H5N2507P lookup
H5N2507P substitution
H5N2507P replacement
History: IPA60R190E6 | AP4407GP | SWMI4N60D | QM4014D | IXFH110N15T2 | DMG4932LSD | QM09N65F



LIST
Last Update
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sd1047 transistor | mj802 | bu508a | bc560c | ksa1220ay | irf 830 | mpsa56 transistor | transistor 2222a