All MOSFET. H5N2507P Datasheet

 

H5N2507P Datasheet and Replacement


   Type Designator: H5N2507P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO3P
 

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H5N2507P Datasheet (PDF)

 ..1. Size:128K  renesas
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H5N2507P

Preliminary Datasheet H5N2507P R07DS0877EJ0200(Previous: RJJ03G0646-0100)250V - 50A - MOS FET Rev.2.00High Speed Power Switching Sep 12, 2012Features Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25C) Low leakage current High speed switching Low gate charge Built-in fast recovery diode Outline RENESAS Package code:

 8.1. Size:132K  renesas
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H5N2507P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:104K  renesas
rej03g1108 h5n2508dldsds.pdf pdf_icon

H5N2507P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:100K  renesas
rej03g1109 h5n2509pds.pdf pdf_icon

H5N2507P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: H5N2301PF , H5N2305P , H5N2305PF , H5N2306PF , H5N2504DL , H5N2504DS , H5N2505DL , H5N2505DS , IRF740 , H5N2508DL , H5N2508DS , H5N2509P , H5N2509PF , H5N2510DL , H5N2510DS , H5N2514P , H5N2515P .

History: IPA60R190E6 | AP4407GP | SWMI4N60D | QM4014D | IXFH110N15T2 | DMG4932LSD | QM09N65F

Keywords - H5N2507P MOSFET datasheet

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