Справочник MOSFET. H5N2510DS

 

H5N2510DS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: H5N2510DS

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 25 W

Предельно допустимое напряжение сток-исток (Uds): 250 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 5 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 15.8 nC

Время нарастания (tr): 18.5 ns

Выходная емкость (Cd): 42 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.89 Ohm

Тип корпуса: DPAK

Аналог (замена) для H5N2510DS

 

 

H5N2510DS Datasheet (PDF)

2.1. rej03g1110 h5n2510dldsds.pdf Size:73K _renesas

H5N2510DS
H5N2510DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.1. rej03g0413 h5n2515p.pdf Size:93K _renesas

H5N2510DS
H5N2510DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.2. rej03g1203 h5n2514p.pdf Size:65K _renesas

H5N2510DS
H5N2510DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.3. h5n2512fl-m0.pdf Size:92K _renesas

H5N2510DS
H5N2510DS

 Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100 250V - 18A - MOS FET Rev.1.00 High Speed Power Switching Jan 08, 2013 Features  Low on-resistance RDS(on) = 0.082  typ. (at ID = 9 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching  Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D

4.4. rej03g0478 h5n2519p.pdf Size:114K _renesas

H5N2510DS
H5N2510DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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