All MOSFET. H5N2510DS Datasheet

 

H5N2510DS MOSFET. Datasheet pdf. Equivalent

Type Designator: H5N2510DS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15.8 nC

Rise Time (tr): 18.5 nS

Drain-Source Capacitance (Cd): 42 pF

Maximum Drain-Source On-State Resistance (Rds): 0.89 Ohm

Package: DPAK

H5N2510DS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H5N2510DS Datasheet (PDF)

6.1. rej03g1110 h5n2510dldsds.pdf Size:73K _renesas

H5N2510DS
H5N2510DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. rej03g0413 h5n2515p.pdf Size:93K _renesas

H5N2510DS
H5N2510DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. rej03g1203 h5n2514p.pdf Size:65K _renesas

H5N2510DS
H5N2510DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. h5n2512fl-m0.pdf Size:92K _renesas

H5N2510DS
H5N2510DS

Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100250V - 18A - MOS FET Rev.1.00High Speed Power Switching Jan 08, 2013Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D

8.4. rej03g0478 h5n2519p.pdf Size:114K _renesas

H5N2510DS
H5N2510DS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: H5N2505DL , H5N2505DS , H5N2507P , H5N2508DL , H5N2508DS , H5N2509P , H5N2509PF , H5N2510DL , IRF540N , H5N2514P , H5N2515P , H5N2519P , H5N2522LS , H5N2801P , H5N2802PF , H5N2803PF , H5N3003P .

 

 
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