HITJ0302MP - параметры транзистора MOSFET, его аналоги, datasheet

HITJ0302MP Datasheet (PDF)

..1. Size:82K renesas
r07ds0477ej hitj0302mp.pdf pdf_icon

Preliminary Datasheet HITJ0302MP R07DS0477EJ0100Silicon P Channel MOS FET Rev.1.00Power Switching Jun 22, 2011Features Low on-resistance RDS(on) = 138 m typ (VGS = 10 V, ID = 1.1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. Source2 2. Gate13.

7.1. Size:84K renesas
r07ds0478ej hitj0303mp.pdf pdf_icon

Preliminary Datasheet HITJ0303MP R07DS0478EJ0100Silicon P Channel MOS FET Rev.1.00Power Switching Jun 22, 2011Features Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. Source2 2. Gate13. D

9.1. Size:86K renesas
r07ds0476ej hitj0204mp.pdf pdf_icon

Preliminary Datasheet HITJ0204MP R07DS0476EJ0100Silicon P Channel MOS FET Rev.1.00Power Switching Jun 22, 2011Features Low on-resistance RDS(on) = 219 m typ (VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. Source2 2. Gate3. Dr

9.2. Size:85K renesas
r07ds0475ej hitj0203mp.pdf pdf_icon

Preliminary Datasheet HITJ0203MP R07DS0475EJ0100Silicon P Channel MOS FET Rev.1.00Power Switching Jun 22, 2011Features Low on-resistance RDS(on) = 142 m typ (VGS = 4.5 V, ID = 1.1 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. Source2 2. Gate13.