MOS FET SKP253 December 2005 Features Package---TO-263 Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating UnitDrain to Source Voltage VDSS 250 VGate to

isc N-Channel MOSFET Transistor SKP253FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 95m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose