R5011ANJ - параметры транзистора MOSFET, его аналоги, datasheet

R5011ANJ Datasheet (PDF)

..1. Size:263K rohm
r5011anj.pdf pdf_icon

10V Drive Nch MOSFET R5011ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS10.14.51.3 Features 1.241) Low on-resistance. 2) Fast switching speed. 2.54 0.40.782.73) Gate-source voltage (VGSS) guaranteed to be 30V. 5.08(1) Gate (1) (2) (3)4) Drive circuits can be simple. (2) Drain(3) SourceEach lead has same dimensions5) Parallel use is

7.1. Size:232K rohm
r5011anx.pdf pdf_icon

R5011ANX Transistors 10V Drive Nch MOSFET R5011ANX Dimensions (Unit : mm) Structure Silicon N-channel MOSFETTO-220FM10.0 3.2 4.52.8 Features 1) Low on-resistance. 1.22) Fast switching speed. 1.33) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8(1)Base4) Drive circuits can be simple. 2.54 2.54 0.75 2.6(2)Collector (1) (2) (3)5) Parallel use i

9.1. Size:3269K rohm
r5011fnj.pdf pdf_icon

R5011FNJDatasheetNch 500V 11A Power MOSFETlOutlinel LPT(S)VDSS 500VRDS(on)(Max.) 0.52 ID 11A PD 50W lInner circuitllFeaturesl1) Fast reverse recovery time (trr).2) Low on-resistance.3) Fast switching speed.4) Gate-source voltage (VGSS) guaranteed to

9.2. Size:283K rohm
r5011fnx.pdf pdf_icon

10V Drive Nch MOSFET R5011FNX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM10.0 3.2 4.52.8 Features 1) Fast reverse recovery time. 2) Low on-resistance. 1.21.33) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 0.85) Drive circuits can be simple. (1) Gate2.54 2.54 0.75 2.6(2) Drain (1) (2) (3)6) Parallel u

Другие MOSFET... 2SK3541 , R4008AND , R5005CNJ , R5007ANJ , R5007ANX , R5009ANJ , R5009ANX , R5009FNX , IRF640N , R5011ANX , R5011FNX , R5013ANJ , R5013ANX , R5016ANJ , R5016ANX , R5016FNX , R5019ANJ .