SSG4530C - описание и поиск аналогов

 ..1. Size:738K  secos
 ssg4530c.pdf 

SSG4530C N-Ch 5.3A, 30V, RDS(ON) 82 m P-Ch -5.2A, -30V, RDS(ON) 80 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on)

 8.1. Size:120K  secos
 ssg4536c.pdf 

SSG4536C N-Ch 7.1A, 30V, RDS(ON) 28 m P-Ch -6A, -30V, RDS(ON) 39 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) a

 9.1. Size:1192K  secos
 ssg4503.pdf 

SSG4503 N Channel 6.9A, 30V,RDS(ON) 28m P Channel -6.3A, -30V,RDS(ON) 36m Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 o 0.375 REF The SSG4503 provide the designer with the best combination of fast switching, 6.20 5.80 0.25 ruggedized device design, low on-resistance and cost-effectiveness.

 9.2. Size:3292K  secos
 ssg4512ce.pdf 

SSG4512CE N & P-Ch Enhancement Mode Power MOSFET N-Ch 6.9 A, 30 V, RDS(ON) 31 m Elektronische Bauelemente P-Ch -5.2 A, -30 V, RDS(ON) 52 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a B high cell density trench process to provide low RDS(on)

 9.3. Size:1078K  secos
 ssg4510.pdf 

SSG4510 N & P-Ch Enhancement Mode Power MOSFET N-Ch 2.5 A, 100 V, RDS(ON) 112 m Elektronische Bauelemente P-Ch -2.5A, -100 V, RDS(ON) 180 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4510 provide the designer with the best B combination of fast switching, ruggedized device design

 9.4. Size:435K  secos
 ssg4520h.pdf 

SSG4520H N-Ch 6.6A, 20V, RDS(ON) 47 m P-Ch -5.2A, -20V, RDS(ON) 79 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs B utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power

 9.5. Size:3228K  secos
 ssg4502ce.pdf 

SSG4502CE N & P-Ch Enhancement Mode Power MOSFET N-Ch 10.0 A, 30 V, RDS(ON) 16 m Elektronische Bauelemente P-Ch -8.5A, -30 V, RDS(ON) 23 m RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOP-8 DESCRIPTION These miniature surface mount MOSFETs utilize a B high cell density trench process to provide low RDS(on)

 9.6. Size:935K  secos
 ssg4542c.pdf 

SSG4542C N-Ch 8.3 A, 40 V, RDS(ON) 14 m P-Ch -7.6 A, -40 V, RDS(ON) 28 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal powe

 9.7. Size:979K  secos
 ssg4505.pdf 

SSG4505 N Channel 10A, 30V,RDS(ON) 14m P Channel -8.4A, -30V,RDS(ON) 20m Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 o 0.375 REF The SSG4505 provide the designer with the best combination of fast switching, 6.20 5.80 0.25 ruggedized device design, low on-resistance and cost-effectiveness. 3.

 9.8. Size:876K  secos
 ssg4501.pdf 

SSG4501 N Channel 7A, 30V,RDS(ON) 28m P Channel -5.3A, -30V,RDS(ON) 50m Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 o 0.375 REF The SSG4501 provide the designer with the best combination of fast switching, 6.20 5.80 0.25 rugged

 9.9. Size:1023K  secos
 ssg4502c.pdf 

SSG4502C N-Ch 10 A, 30 V, RDS(ON) 16 m P-Ch -8.5 A, -30 V, RDS(ON) 23 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power lo

 9.10. Size:1088K  secos
 ssg4543c.pdf 

SSG4543C N-Ch 6.5 A, 40 V, RDS(ON) 32 m P-Ch -7.6 A, -40 V, RDS(ON) 30 m Elektronische Bauelemente N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal powe