MGSF1P02 - описание и поиск аналогов

MGSF1P02 Power MOSFET P-Channel 3 DRAIN SOT-23 Features 3 1 *Low On-Resistance 0.35 GATE 1 *Low Input Capacitance 130 PF 2 *Low Out put Capacitance 120 PF 2 SOURCE *Low Threshole 1.7V(TYE) *Fast Switching Speed 2.5ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit VDSS Drain-Source Voltage 20 V VGS Gate-Source Voltage 20 V I

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGSF1P02LT1/D MGSF1P02LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL ENHANCEMENT MODE Field Effect Transistors TMOS MOSFET Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGSF1P02LT1/D MGSF1P02LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL ENHANCEMENT MODE Field Effect Transistors TMOS MOSFET Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorola