CEP06N7 - описание и поиск аналогов

 ..1. Size:375K  cet
 cep06n7 ceb06n7 cef06n7.pdf 

CEP06N7/CEB06N7 CEF06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP06N7 700V 2 6A 10V CEB06N7 700V 2 6A 10V CEF06N7 700V 2 6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CEF SERIES S TO-263(D

 9.1. Size:368K  ncepower
 ncep060n10f.pdf 

NCEP060N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =52A switching performance. Both conduction and switching power RDS(ON)=6.7m , typical @ VGS=10V losses are minimized due to an extremely low combina

 9.2. Size:1006K  ncepower
 ncep065n12agu.pdf 

NCEP065N12AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =100A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =6.9m , typical @ V =4.5V DS(ON) GS losses ar

 9.3. Size:333K  ncepower
 ncep068n10ag.pdf 

http //www.ncepower.com NCEP068N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AG uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.3m (typical) @ VGS=4.5V lo

 9.4. Size:198K  ncepower
 ncep060n60g.pdf 

http //www.ncepower.com NCEP060N60G NCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEP060N60G uses Super Trench II technology that is VDS =60V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m (max) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RD

 9.5. Size:398K  ncepower
 ncep060n10 ncep060n10d.pdf 

NCEP060N10, NCEP060N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 9.6. Size:767K  ncepower
 ncep065n10gu.pdf 

http //www.ncepower.com NCEP065N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10GU uses Super Trench II technology that is V =100V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =5.9m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R prod

 9.7. Size:298K  ncepower
 ncep065n10.pdf 

NCEP065N10 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =93A switching performance. Both conduction and switching power RDS(ON)=6.0m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

 9.8. Size:400K  ncepower
 ncep060n10g.pdf 

NCEP060N10G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical @ VGS=10V losses are minimized due to an extremely low combin

 9.9. Size:398K  ncepower
 ncep060n10d.pdf 

NCEP060N10, NCEP060N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 9.10. Size:329K  ncepower
 ncep063n10gu.pdf 

 9.11. Size:342K  ncepower
 ncep065n85d.pdf 

NCEP065N85,NCEP065N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.9m , typical (TO-220)@ VGS=10V losses are minimized due to an extre

 9.12. Size:342K  ncepower
 ncep065n85 ncep065n85d.pdf 

NCEP065N85,NCEP065N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.9m , typical (TO-220)@ VGS=10V losses are minimized due to an extre

 9.13. Size:362K  ncepower
 ncep065n10ak.pdf 

NCEP065N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.7m , typical @ VGS=4.5V losses are m

 9.14. Size:366K  ncepower
 ncep068n10ak.pdf 

http //www.ncepower.com NCEP068N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10AK uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.5m (typical) @ VGS=4.5V lo

 9.15. Size:330K  ncepower
 ncep063n10agu.pdf 

NCEP063N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =95A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.4m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.8m , typical @ VGS=4.5V losses are

 9.16. Size:398K  ncepower
 ncep060n10.pdf 

NCEP060N10, NCEP060N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 9.17. Size:331K  ncepower
 ncep065n10agu.pdf 

http //www.ncepower.com NCEP065N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10AGU uses Super Trench II technology that VDS =100V,ID =90A is uniquely optimized to provide the most efficient high RDS(ON)=5.3m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=6.5m (typical) @ VGS=4.5V switching power

 9.18. Size:297K  ncepower
 ncep065n85.pdf 

NCEP065N85 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.7m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low com

 9.19. Size:320K  ncepower
 ncep063n85g.pdf 

NCEP063N85G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =90A switching performance. Both conduction and switching power RDS(ON)=5.5m , typical@ VGS=10V losses are minimized due to an extremely low combination

 9.20. Size:308K  ncepower
 ncep068n10k.pdf 

http //www.ncepower.com NCEP068N10K NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10K uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

 9.21. Size:330K  ncepower
 ncep065n10ag.pdf 

NCEP065N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.0m , typical @ VGS=4.5V losses are m

 9.22. Size:329K  ncepower
 ncep068n10g.pdf 

http //www.ncepower.com NCEP068N10G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP068N10G uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)