All MOSFET. CEP06N7 Datasheet

 

CEP06N7 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEP06N7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 29 nC

Rise Time (tr): 73 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: TO220

CEP06N7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CEP06N7 Datasheet (PDF)

1.1. cep06n7 ceb06n7 cef06n7.pdf Size:375K _cet

CEP06N7
CEP06N7

CEP06N7/CEB06N7 CEF06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP06N7 700V 2? 6A 10V CEB06N7 700V 2? 6A 10V CEF06N7 700V 2? 6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CEF SERIES S TO-263(DD-PAK) T

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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