FDC6303N Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDC6303N
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.68 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8.5 ns
Cossⓘ - Выходная емкость: 28 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
Тип корпуса: SUPERSOT6
Аналог (замена) для FDC6303N
FDC6303N Datasheet (PDF)
fdc6303n.pdf

August 1997 FDC6303N Digital FET, Dual N-ChannelGeneral Description Features25 V, 0.68 A continuous, 2 A Peak.These dual N-Channel logic level enhancement mode fieldRDS(ON) = 0.6 @ VGS = 2.7 Veffect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density RDS(ON) = 0.45 @ VGS= 4.5 V.process is especially tailored
fdc6305n.pdf

March 1999FDC6305NDual N-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description Features 2.7 A, 20 V. RDS(ON) = 0.08 @ VGS = 4.5 VThese N-Channel low threshold 2.5V specifiedMOSFETs are produced using Fairchild Semiconductor'sRDS(ON) = 0.12 @ VGS = 2.5 Vadvanced PowerTrench process that has beenespecially tailored to minimize on-state resistance and Low
fdc6306p.pdf

February 1999FDC6306PDual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -1.9 A, -20 V. RDS(on) = 0.170 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.250 @ VGS = -2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain
fdc6304p.pdf

July 1997 FDC6304P Digital FET, Dual P-Channel General Description Features-25 V, -0.46 A continuous, -1.0 A Peak.These P-Channel enhancement mode field effect transistor areproduced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.5 @ VGS= -2.7 Vtechnology. This very high density process is tailored to minimizeRDS(ON) = 1.1 @ VGS = -4.5 V.on-state
Другие MOSFET... FDB7030BL , FDB7030L , FDB7045L , FDB8030L , AS3401 , FDC5612 , FDC6301N , FDC6302P , AON7506 , FDC6304P , FDC6305N , FDC6306P , FDC6308P , FDC633N , FDC634P , FDC636P , FDC637AN .
History: CEF6601 | CS630F



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