Справочник MOSFET. CEP1195

 

CEP1195 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CEP1195
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 166 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 21.5 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.75 Ohm
   Тип корпуса: TO220

 Аналог (замена) для CEP1195

 

 

CEP1195 Datasheet (PDF)

 ..1. Size:432K  cet
 cep1195 ceb1195 cef1195.pdf

CEP1195 CEP1195

CEP1195/CEB1195 CEF1195N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1195 900V 2.75 5A 10VCEB1195 900V 2.75 5A 10VCEF1195 900V 2.75 5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

 9.1. Size:383K  cet
 ceb110p03 cep110p03.pdf

CEP1195 CEP1195

CEP110P03/CEB110P03P-Channel Enhancement Mode Field Effect TransistorPRELIMINARYFEATURES-30V, -105.5A, RDS(ON) =5.8m @VGS = -10V.RDS(ON) =8.5m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABS

 9.2. Size:433K  cet
 cep1186 ceb1186 cef1186.pdf

CEP1195 CEP1195

CEP1186/CEB1186CEF1186N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1186 800V 2.3 6A 10VCEB1186 800V 2.3 6A 10VCEF1186 800V 2.3 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

 9.3. Size:302K  ncepower
 ncep11n10as.pdf

CEP1195 CEP1195

NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim

 9.4. Size:717K  ncepower
 ncep11n10aqu.pdf

CEP1195 CEP1195

http://www.ncepower.com NCEP11N10AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55ADS Duniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5VDS(ON

 9.5. Size:363K  ncepower
 ncep11n10ak.pdf

CEP1195 CEP1195

http://www.ncepower.com NCEP11N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo

 9.6. Size:333K  ncepower
 ncep11n10agu.pdf

CEP1195 CEP1195

http://www.ncepower.com NCEP11N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V

 9.7. Size:333K  ncepower
 ncep11n12agu.pdf

CEP1195 CEP1195

NCEP11N12AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =57A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m , typical@ VGS=4.5V losses are mi

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