CEP85N75V - описание и поиск аналогов

 

CEP85N75V - Аналоги. Основные параметры


   Наименование производителя: CEP85N75V
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 85 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 670 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для CEP85N75V

   - подбор ⓘ MOSFET транзистора по параметрам

 

CEP85N75V технические параметры

 ..1. Size:435K  cet
cep85n75v ceb85n75v.pdfpdf_icon

CEP85N75V

CEP85N75V/CEB85N75V N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 75V, 85A, RDS(ON) = 12m @VGS = 12V. RDS(ON) = 13m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE

 6.1. Size:434K  cet
cep85n75 ceb85n75 cef85n75.pdfpdf_icon

CEP85N75V

CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP85N75 75V 12m 86A 10V CEB85N75 75V 12m 86A 10V CEF85N75 75V 12m 86A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through

 9.1. Size:451K  cet
cep85a3 ceb85a3.pdfpdf_icon

CEP85N75V

CEP85A3/CEB85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 90A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-263 & TO-220 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25

 9.2. Size:912K  ncepower
ncep85t15d.pdfpdf_icon

CEP85N75V

http //www.ncepower.com NCEP85T15D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi

Другие MOSFET... CEP83A3 , CEP83A3G , CEP840A , CEP840G , CEP840L , CEP84A4 , CEP85A3 , CEP85N75 , AO4407A , CEP9060N , CEP93A3 , CEBF634 , CEBF640 , CED01N65 , CED01N65A , CED01N6G , CED01N7 .

 

 
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