Справочник MOSFET. CEH2310

 

CEH2310 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CEH2310
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
   Тип корпуса: TSOP6

 Аналог (замена) для CEH2310

 

 

CEH2310 Datasheet (PDF)

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 ceh2310.pdf

CEH2310 CEH2310

CEH2310N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 6.2A , RDS(ON) = 33m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V. D(1,2,5,6,)High dense cell design for extremely low RDS(ON).Rugged and reliable.Lead-free plating ; RoHS compliant.45TSOP-6 package.6G(3)321S(4)TSOP-6ABSOLUTE

 8.1. Size:164K  cet
 ceh2316.pdf

CEH2310 CEH2310

CEH2316N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 6A , RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit

 8.2. Size:340K  cet
 ceh2313.pdf

CEH2310 CEH2310

CEH2313P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -4.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol

 9.1. Size:446K  cet
 ceh2321.pdf

CEH2310 CEH2310

CEH2321P-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead-free plating ; RoHS compliant.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter S

 9.2. Size:447K  cet
 ceh2321a.pdf

CEH2310 CEH2310

CEH2321APRELIMINARYP-Channel Enhancement Mode Field Effect TransistorFEATURES-20V, -4.8A, RDS(ON) = 55m @VGS = -4.5V. RDS(ON) = 62m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.D(1,2,5,6,)Lead-free plating ; RoHS compliant.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise note

 9.3. Size:302K  cet
 ceh2305.pdf

CEH2310 CEH2310

CEH2305P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-30V, -4.9A , RDS(ON) = 52m @VGS = -10V. RDS(ON) = 65m @VGS = -4.5V. RDS(ON) = 119m @VGS = -2.5V. High dense cell design for extremely low RDS(ON).D(1,2,5,6,)Rugged and reliable.Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA

 9.4. Size:428K  cet
 ceh2331.pdf

CEH2310 CEH2310

CEH2331P-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES-20V, -5.2A , RDS(ON) = 48m @VGS = -4.5V. RDS(ON) = 60m @VGS = -2.5V. RDS(ON) = 78m @VGS = -1.8V. High dense cell design for extremely low RDS(ON).D(1,2,5,6,)Rugged and reliable.Lead free product is acquired.TSOP-6 package.456G(3)321S(4)TSOP-6ABSOLUTE MAXIMUM RATINGS TA

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