Справочник MOSFET. FDD6690A

 

FDD6690A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDD6690A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 46 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 325 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

FDD6690A Datasheet (PDF)

 ..1. Size:117K  fairchild semi
fdd6690a.pdfpdf_icon

FDD6690A

July 2003FDD6690A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low gate chargesu

 ..2. Size:287K  inchange semiconductor
fdd6690a.pdfpdf_icon

FDD6690A

isc N-Channel MOSFET Transistor FDD6690AFEATURESDrain Current : I =46A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.1. Size:106K  fairchild semi
fdd6696.pdfpdf_icon

FDD6690A

December 2002FDD6696/FDU669630V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 50A, 30 V R = 8.0 m @ V = 10 VDS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 10.7 m @ V = 4.5 VDS(ON) GSconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low

 8.2. Size:83K  fairchild semi
fdd6692 fdu6692.pdfpdf_icon

FDD6690A

April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optim

Другие MOSFET... FDD5202P , FDD5680 , FDD5690 , FDD6030L , FDD6612A , FDD6670A , FDD6680 , FDD6680A , MMIS60R580P , AS3402 , FDG311N , FDG312P , FDG313N , FDG314P , FDG315N , FDG316P , FDG6301N .

History: 6N70KG-TMS-T | FKH0660 | AP9980GH-HF | WMB115N15HG4 | IRFSL4410Z | MTDK3S6R | SSM3K15AMFV

 

 
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