All MOSFET. FDD6690A Datasheet

 

FDD6690A Datasheet and Replacement


   Type Designator: FDD6690A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-252
 
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FDD6690A Datasheet (PDF)

 ..1. Size:117K  fairchild semi
fdd6690a.pdf pdf_icon

FDD6690A

July 2003FDD6690A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 12 m @ VGS = 10 VSemiconductors advanced PowerTrench process that RDS(ON) = 14 m @ VGS = 4.5 Vhas been especially tailored to minimize the on stateresistance and yet maintain low gate charge for Low gate chargesu

 ..2. Size:287K  inchange semiconductor
fdd6690a.pdf pdf_icon

FDD6690A

isc N-Channel MOSFET Transistor FDD6690AFEATURESDrain Current : I =46A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =12m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 8.1. Size:106K  fairchild semi
fdd6696.pdf pdf_icon

FDD6690A

December 2002FDD6696/FDU669630V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 50A, 30 V R = 8.0 m @ V = 10 VDS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 10.7 m @ V = 4.5 VDS(ON) GSconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low

 8.2. Size:83K  fairchild semi
fdd6692 fdu6692.pdf pdf_icon

FDD6690A

April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optim

Datasheet: FDD5202P , FDD5680 , FDD5690 , FDD6030L , FDD6612A , FDD6670A , FDD6680 , FDD6680A , MMIS60R580P , AS3402 , FDG311N , FDG312P , FDG313N , FDG314P , FDG315N , FDG316P , FDG6301N .

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