CES2312 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CES2312
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 10 nC
trⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 300 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.033 Ohm
Тип корпуса: SOT23
CES2312 Datasheet (PDF)
ces2312.pdf
CES2312N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 4.5A, RDS(ON) = 33m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Vo
ces2317.pdf
CES2317P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -3.1A, RDS(ON) = 80m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V. RDS(ON) = 120m @VGS = -2.5V.High dense cell design for extremely low RDS(ON).DRugged and reliable.Lead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedPar
ces2316.pdf
CES2316N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 4.8A, RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Vol
ces2310.pdf
CES2310N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 4.8A, RDS(ON) = 34m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V.DHigh dense cell design for extremely low RDS(ON).Rugged and reliable.Lead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C u
ces2313.pdf
CES2313P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -3.6A, RDS(ON) = 60m @VGS = -10V. RDS(ON) = 90m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source
ces2314.pdf
CES2314N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 4A, RDS(ON) = 50m @VGS = 10V. RDS(ON) = 70m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Volta
ces2313a.pdf
CES2313AP-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -3.8A, RDS(ON) = 55m @VGS = -10V. RDS(ON) = 86m @VGS = -4.5V.High dense cell design for extremely low RDS(ON).Rugged and reliable.DLead free product is acquired.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Sourc
ces2314.pdf
CES2314www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918