FDN359AN. Аналоги и основные параметры

Наименование производителя: FDN359AN

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 120 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.046 Ohm

Тип корпуса: SUPERSOT3

Аналог (замена) для FDN359AN

- подборⓘ MOSFET транзистора по параметрам

 

FDN359AN даташит

 ..1. Size:117K  fairchild semi
 fdn359an.pdf pdf_icon

FDN359AN

April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V using Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Very fast switching

 ..2. Size:231K  onsemi
 fdn359an.pdf pdf_icon

FDN359AN

FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON) = 0.060 @ VGS = 4.5 V. using ON Semiconductor's advanced PowerTrench process that has been especially tailored Very fast switching. to minimize on-state resistance and yet maintain Low gate cha

 ..3. Size:843K  cn shikues
 fdn359an.pdf pdf_icon

FDN359AN

FDN359AN N-Channel Enhancement Mode MOSFET Feature DS(ON) GS 30V/3.0A, R = 45m (MAX) @V = 10V. DS(ON) GS R =50m (MAX) @V = 4.5V. DS(ON) GS R =65m (MAX) @V = 2.5V. DS(ON) . Super High dense cell design for extremely low R Reliable and Rugged. SOT-23 SOT-23 for Surface Mount Package. A pplications Power Management Portable Equipment and Battery Powered System

 8.1. Size:97K  fairchild semi
 fdn359bn f095.pdf pdf_icon

FDN359AN

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r

ПОКАЗАТЬ ЕЩЁ

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