FDN359AN
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDN359AN
Marking Code: 359A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 2.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046
Ohm
Package:
SUPERSOT3
FDN359AN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDN359AN
Datasheet (PDF)
..1. Size:117K fairchild semi
fdn359an.pdf 
April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET is produced2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 Vusing Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V.PowerTrench process that has been especially tailoredto minimize on-state resistance and yet maintainVery fast switching
..2. Size:231K onsemi
fdn359an.pdf
FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 VThis N-Channel Logic Level MOSFET is produced RDS(ON) = 0.060 @ VGS = 4.5 V.using ON Semiconductor's advanced PowerTrench process that has been especially tailored Very fast switching.to minimize on-state resistance and yet maintain Low gate cha
..3. Size:843K cn shikues
fdn359an.pdf
FDN359ANN-Channel Enhancement Mode MOSFET Feature DS(ON) GS 30V/3.0A, R = 45m(MAX) @V = 10V. DS(ON) GS R =50m(MAX) @V = 4.5V. DS(ON) GS R =65m(MAX) @V = 2.5V. DS(ON) .Super High dense cell design for extremely low R Reliable and Rugged. SOT-23 SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered System
8.1. Size:97K fairchild semi
fdn359bn f095.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
8.2. Size:101K fairchild semi
fdn359bn.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
8.3. Size:101K onsemi
fdn359bn.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
Datasheet: FDN335N
, FDN336P
, FDN337N
, FDN338P
, FDN339AN
, FDN340P
, FDN357N
, FDN358P
, IRF1405
, FDN360P
, FDN361AN
, FDP4020P
, FDP4030L
, FDP5680
, FDP5690
, FDP6030BL
, FDP6030L
.
