FDN359AN MOSFET Datasheet: N-Ch, 30V, 2.7A. Full specification with pinout and replacement list

FDN359AN Specs and Replacement

   Type Designator: FDN359AN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SUPERSOT3

FDN359AN substitution

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FDN359AN datasheet

..1. Size:117K fairchild semi
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April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V using Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Very fast switching... See More ⇒

..2. Size:231K onsemi
fdn359an.pdf pdf_icon

FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON) = 0.060 @ VGS = 4.5 V. using ON Semiconductor's advanced PowerTrench process that has been especially tailored Very fast switching. to minimize on-state resistance and yet maintain Low gate cha... See More ⇒

..3. Size:843K cn shikues
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FDN359AN N-Channel Enhancement Mode MOSFET Feature DS(ON) GS 30V/3.0A, R = 45m (MAX) @V = 10V. DS(ON) GS R =50m (MAX) @V = 4.5V. DS(ON) GS R =65m (MAX) @V = 2.5V. DS(ON) . Super High dense cell design for extremely low R Reliable and Rugged. SOT-23 SOT-23 for Surface Mount Package. A pplications Power Management Portable Equipment and Battery Powered System... See More ⇒

8.1. Size:97K fairchild semi
fdn359bn f095.pdf pdf_icon

January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchild s Semiconductor s advanced PowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r... See More ⇒