Справочник MOSFET. FDN360P

 

FDN360P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDN360P
   Маркировка: 360
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 6.2 nC
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 83 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: SUPERSOT3

 Аналог (замена) для FDN360P

 

 

FDN360P Datasheet (PDF)

 ..1. Size:122K  fairchild semi
fdn360p.pdf

FDN360P
FDN360P

May 2003 FDN360P Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2 A, 30 V. RDS(ON) = 80 m @ VGS = 10 V using Fairchild Semiconductor advanced Power Trench RDS(ON) = 125 m @ VGS = 4.5 V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate

 ..2. Size:239K  onsemi
fdn360p.pdf

FDN360P
FDN360P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:549K  cn shikues
fdn360p.pdf

FDN360P
FDN360P

FDN360PP-Channel Enhancement Mode MOSFET Feature DS(ON) GS -30V/-3.2A, R =55m(MAX) @V = -10V. DS(ON) GS R = 70m(MAX) @V = -4.5V. DS(ON) GS R =120m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low RReliable and Rugged SOT-23 for Surface Mount Package SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems

 9.1. Size:222K  1
fdn363n.pdf

FDN360P
FDN360P

PreliminaryMay 2003FDN363NN-Channel PowerTrench MOSFET100V, 1A, 240mFeatures Applications rDS(ON) = 200m (Typ.), VGS = 10V, ID = 1A DC/DC converters Qg(tot) = 4nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)Formerly developmental type 82720DDSGGSSuperSOT-3MOSFET Maximum

 9.2. Size:129K  fairchild semi
fdn361bn.pdf

FDN360P
FDN360P

February 2009FDN361BN30V N-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 1.4 A, 30 V. RDS(ON) = 110 m @ VGS = 10 V using Fairchild Semiconductors advanced RDS(ON) = 160 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superio

 9.3. Size:775K  fairchild semi
fdn361an.pdf

FDN360P
FDN360P

April 1999FDN361ANN-Channel, Logic Level, PowerTrenchFeaturesGeneral DescriptionThis N-Channel Logic Level MOSFET is produced using 1.8 A, 30 V. RDS(on) = 0.100 @ VGS = 10 VFairchild Semiconductor's PowerTrench process that has RDS(on) = 0.150 @ VGS = 4.5 V.been especially tailored to minimize the on-state resistanceand yet maintain low

 9.4. Size:244K  onsemi
fdn361bn.pdf

FDN360P
FDN360P

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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History: FDP20N50 | FDMS8848NZ

 

 
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