FDN360P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDN360P
Маркировка: 360
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6.2 nC
trⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 83 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: SUPERSOT3
FDN360P Datasheet (PDF)
fdn360p.pdf
May 2003 FDN360P Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2 A, 30 V. RDS(ON) = 80 m @ VGS = 10 V using Fairchild Semiconductor advanced Power Trench RDS(ON) = 125 m @ VGS = 4.5 V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate
fdn360p.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdn360p.pdf
FDN360PP-Channel Enhancement Mode MOSFET Feature DS(ON) GS -30V/-3.2A, R =55m(MAX) @V = -10V. DS(ON) GS R = 70m(MAX) @V = -4.5V. DS(ON) GS R =120m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low RReliable and Rugged SOT-23 for Surface Mount Package SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems
fdn363n.pdf
PreliminaryMay 2003FDN363NN-Channel PowerTrench MOSFET100V, 1A, 240mFeatures Applications rDS(ON) = 200m (Typ.), VGS = 10V, ID = 1A DC/DC converters Qg(tot) = 4nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse)Formerly developmental type 82720DDSGGSSuperSOT-3MOSFET Maximum
fdn361bn.pdf
February 2009FDN361BN30V N-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 1.4 A, 30 V. RDS(ON) = 110 m @ VGS = 10 V using Fairchild Semiconductors advanced RDS(ON) = 160 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superio
fdn361an.pdf
April 1999FDN361ANN-Channel, Logic Level, PowerTrenchFeaturesGeneral DescriptionThis N-Channel Logic Level MOSFET is produced using 1.8 A, 30 V. RDS(on) = 0.100 @ VGS = 10 VFairchild Semiconductor's PowerTrench process that has RDS(on) = 0.150 @ VGS = 4.5 V.been especially tailored to minimize the on-state resistanceand yet maintain low
fdn361bn.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие MOSFET... FDN336P , FDN337N , FDN338P , FDN339AN , FDN340P , FDN357N , FDN358P , FDN359AN , IRLZ44N , FDN361AN , FDP4020P , FDP4030L , FDP5680 , FDP5690 , FDP6030BL , FDP6030L , FDP6035AL .
History: FDP20N50 | FDMS8848NZ
History: FDP20N50 | FDMS8848NZ
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918