FDN360P Datasheet. Specs and Replacement

Type Designator: FDN360P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 83 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SUPERSOT3

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FDN360P datasheet

 ..1. Size:122K  fairchild semi
fdn360p.pdf pdf_icon

FDN360P

May 2003 FDN360P Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2 A, 30 V. RDS(ON) = 80 m @ VGS = 10 V using Fairchild Semiconductor advanced Power Trench RDS(ON) = 125 m @ VGS = 4.5 V process that has been especially tailored to minimize the on-state resistance and yet maintain low gate ... See More ⇒

 ..2. Size:239K  onsemi
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FDN360P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:549K  cn shikues
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FDN360P

FDN360P P-Channel Enhancement Mode MOSFET Feature DS(ON) GS -30V/-3.2A, R =55m (MAX) @V = -10V. DS(ON) GS R = 70m (MAX) @V = -4.5V. DS(ON) GS R =120m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SOT-23 for Surface Mount Package SOT-23 Applications Power Management Portable Equipment and Battery Powered Systems... See More ⇒

 9.1. Size:222K  1
fdn363n.pdf pdf_icon

FDN360P

Preliminary May 2003 FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240m Features Applications rDS(ON) = 200m (Typ.), VGS = 10V, ID = 1A DC/DC converters Qg(tot) = 4nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82720 D D S G G S SuperSOT-3 MOSFET Maximum... See More ⇒

Detailed specifications: FDN336P, FDN337N, FDN338P, FDN339AN, FDN340P, FDN357N, FDN358P, FDN359AN, 75N75, FDN361AN, FDP4020P, FDP4030L, FDP5680, FDP5690, FDP6030BL, FDP6030L, FDP6035AL

Keywords - FDN360P MOSFET specs

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