KF5N50DZ datasheet, аналоги, основные параметры
Наименование производителя: KF5N50DZ 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 59.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 71 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
Тип корпуса: DPAK
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Аналог (замена) для KF5N50DZ
- подборⓘ MOSFET транзистора по параметрам
KF5N50DZ даташит
kf5n50dz-ds.pdf
KF5N50DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic
kf5n50dz-iz.pdf
KF5N50DZ/IZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20
kf5n50d dz.pdf
KF5N50D/DZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switching mode p
kf5n50ds.pdf
KF5N50DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ba
Другие IGBT... KF4N20LD, KF4N20LI, KF4N20LW, KF4N65F, KF4N65P, KF4N80F, KF5N50D, KF5N50DS, MMIS60R580P, KF5N50F, KF5N50FS, KF5N50FSA, KF5N50FZ, KF5N50FZA, KF5N50IZ, KF5N50PZ, KF5N53D
Параметры MOSFET. Взаимосвязь и компромиссы
History: SSG4362N | IRF7752 | QM2402J | SM6A12NSU | APG60N10NF | APJ50N65P | 2SK1727
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