KF5N50DZ
MOSFET. Datasheet pdf. Equivalent
Type Designator: KF5N50DZ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 59.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 4.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 71
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.1
Ohm
Package:
DPAK
KF5N50DZ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KF5N50DZ
Datasheet (PDF)
0.1. Size:382K kec
kf5n50dz-ds.pdf
KF5N50DZ/DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20electronic
0.2. Size:404K kec
kf5n50dz-iz.pdf
KF5N50DZ/IZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50DZThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20
7.1. Size:380K kec
kf5n50d dz.pdf
KF5N50D/DZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and LC D_A 6.60 + 0.20_B 6.10 + 0.20switching mode p
7.2. Size:382K kec
kf5n50ds.pdf
KF5N50DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20electronic ba
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